Exposure apparatus

ABSTRACT

A projection optical system of the present invention has a first lens group G 1  being positive, a second lens group G 2  being negative, a third lens group G 3  being positive, a fourth lens group G 4  being negative, a fifth lens group G 5  being positive, and a sixth lens group G 6  being positive in the named order from the first object toward the second object, in which the second lens group G 2  comprises an intermediate lens group G 2M  between a negative front lens L 2F  and a negative rear lens L 2R  and in which the intermediate lens group G 2M  is arranged to comprise at least a first positive lens being positive, a second lens being negative, a third lens being negative, and a fourth lens being negative in the named order from the first object toward the second object. The present invention involves findings of suitable focal length ranges for the first to the sixth lens groups G 1  to G 6  and an optimum range of an overall focal length of from the second negative lens to the fourth lens with respect to a focal length of the second lens group G 2 .

This is a continuation of application Ser. No. 08/706,761, filed Sep. 3,1996, which is a continuation application of application Ser. No.08/384,081, filed Feb. 6, 1995, both now abandoned.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to an exposure apparatus having aprojection optical system for projecting a pattern of a first objectonto a photosensitive substrate or the like as a second object, and moreparticularly to a projection optical system suitably applicable toprojection exposure of a pattern for semiconductor or liquid crystalformed on a reticle (mask) as the first object onto the substrate(semiconductor wafer, plate, etc.) as the second object.

2. Related Background Art

As the patterns of integrated circuits become finer and finer, theresolving power required for the exposure apparatus used in printing ofwafer also becomes higher and higher. In addition to the improvement inresolving power, the projection optical systems of the exposureapparatus are required to decrease image stress.

Here, the image stress includes those due to bowing or the like of theprinted wafer on the image side of projection optical system and thosedue to bowing or the like of the reticle with circuit pattern writtentherein, on the object side of projection optical system, as well asdistortion caused by the projection optical system.

With a recent further progress of fineness tendency of transferpatterns, demands for decreasing the image stress are also becominggreater.

In order to decrease effects of the wafer bowing on the image stress,the conventional technology has employed the so-called image-sidetelecentric optical system that locates the exit pupil position at afarther point on the image side of projection optical system.

On the other hand, the image stress due to the bowing of reticle canalso be reduced by employing a so-called object-side telecentric opticalsystem that locates the entrance pupil position of projection opticalsystem at a farther point from the object plane, and there aresuggestions to locate the entrance pupil position of projection opticalsystem at a relatively far position from the object plane as described.Examples of those suggestions are described for example in JapaneseLaid-open Patent Applications No. 63-118115 and No. 5-173065 and U.S.Pat. No. 5,260,832.

SUMMARY OF THE INVENTION

An object of the invention is to provide an exposure apparatus having ahigh-performance projection optical system which can correct theaberrations, particularly the distortion, very well even in thebitelecentric arrangement while keeping a relatively wide exposure areaand a large numerical aperture.

To achieve the above object, the present invention involves an exposureapparatus having a high-performance projection optical system comprisinga stage allowing a photosensitive substrate (for example, asemiconductor wafer coated with a photosensitive material such as aphotoresist) to be held on a main surface thereof, an illuminationoptical system having a light source for emitting exposure light of apredetermined wavelength and transferring a predetermined pattern on amask onto the substrate, and a projecting optical system for projectingan image of the mask, on the substrate surface. The above projectingoptical system projects an image of a first object (for example, a maskwith a pattern such as an integrated circuit) onto a second object (forexample, a photosensitive substrate).

As shown in FIG. 1, the projection optical system has a first lens groupG₁ with positive refracting power, a second lens group G₂ with negativerefracting power, a third lens group G₃ with positive refracting power,a fourth lens group G₄ with negative refracting power, a fifth lensgroup G₅ with positive refracting power, and a sixth lens group G₆ withpositive refracting power in the named order from the side of the firstobject R. The and the second lens group G₂ further comprises a frontlens L_(2F) placed as closest to the first object R and having negativerefracting power with a concave surface to the second object W, a rearlens L_(2R) placed as closest to the second object and having negativerefracting power with a concave surface to the first object R, and anintermediate lens group G_(2M) placed between the front lens L_(2F) inthe second lens group G₂ and the rear lens L_(2R) in the second lensgroup G₂. The intermediate lens group G_(2M) has a first lens L_(M1)with positive refracting power, a second lens L_(M2) with negativerefracting power, a third lens L_(M3) with negative refracting power,and a fourth lens L_(M4) with negative refracting power in the namedorder from the side of the first object R.

First, the first lens group G₁ with positive refracting powercontributes mainly to a correction of distortion while maintainingtelecentricity, and specifically, the first lens group G₁ is arranged togenerate a positive distortion to correct in a good balance negativedistortions caused by the plurality of lens groups located on the secondobject side after the first lens group G₁. The second lens group G₂ withnegative refracting power and the fourth lens group G₄ with negativerefracting power contribute mainly to a correction of Petzval sum tomake the image plane flat. The two lens groups of the second lens groupG₂ with negative refracting power and the third lens group G₃ withpositive refracting power form an inverse telescopic system tocontribute to guarantee of back focus (a distance from an opticalsurface such as a lens surface closest to the second object W in theprojection optical system to the second object W) in the projectionoptical system. The fifth lens group G₅ with positive refracting powerand the sixth lens group G₆ similarly with positive refracting powercontribute mainly to suppressing generation of distortion andsuppressing generation particularly of spherical aberration as much aspossible in order to fully support high NA structure on the secondobject side.

Based on the above structure, the front lens L_(2F) placed as closest tothe first object R in the second lens group G₂ and having the negativerefracting power with a concave surface to the second object Wcontributes to corrections of curvature of field and coma, and the rearlens L_(2R) placed as closest to the second object W in the second lensgroup G₂ and having the negative refracting power with a concave surfaceto the first object R to corrections of curvature of field, coma, andastigmatism. In the intermediate lens group G_(2M) placed between thefront lens L_(2F) and the rear lens L_(2R), the first lens L_(M1) withpositive refracting power contributes to a correction of negativedistortions caused by the second to fourth lenses L_(M2)-L_(M4) withnegative refracting power greatly contributing to the correction ofcurvature of field.

In particular, in the above projecting optical system, the followingconditions (1) to (5) are satisfied when a focal length of the firstlens group G₁ is f₁, a focal length of the second lens group G₂ is f₂,afocal length of the third lens group G₃ is f₃, a focal length of thefourth lens group G₄ is f₄, a focal length of the fifth lens group G₂ isf₅,a focal length of the sixth lens group G₆ is f₆,an overall focallength of the second to the fourth lenses L_(M2)-L_(M4) in theintermediate lens group G_(2M) in the second lens group G₂ is f_(n), anda distance from the first object R to the second object W is L:

0.1<f₁/f₃<17  (1)

0.1<f₂/f₄<14  (2)

0.1<f₅/L<0.9  (3)

0.1<f₆/L<1.6  (4)

0.1<f_(n)/f₂<2.0  (5)

The condition (1) defines an optimum ratio between the focal length f₁of the first lens group G₁ with positive refracting power and the focallength f₃ of the third lens group G₃ with positive refracting power,which is an optimum refracting power (power) balance between the firstlens group G₁ and the third lens group G₃. This condition (1) is mainlyfor correcting the distortion in a good balance. Below the lower limitof this condition (1) a large negative distortion is produced becausethe refracting power of the third lens group G₃ becomes relatively weakto the refracting power of the first lens group G₁. Above the upperlimit of the condition (1) a large negative distortion is producedbecause the refracting power of the first lens group G₁ becomesrelatively weak to the refracting power of the third lens group G₃.

The condition (2) defines an optimum ratio between the focal length f₂of the second lens group G₂ with negative refracting power and the focallength f₃ of the fourth lens group G₁ with negative refracting power,which is an optimum refracting power (power) balance between the secondlens group G₂ and the fourth lens group G₄. This condition (2) is mainlyfor keeping the Petzval sum small so as to correct the curvature offield well while securing a wide exposure field. Below the lower limitof the condition (2), a large positive Petzval sum appears because therefracting power of the fourth lens group G₄ becomes relatively weak tothe refracting power of the second lens group G₄. Above the upper limitof the condition (2) a large positive Petzval sum appears because therefracting power of the second lens group G₂ becomes relatively weak tothe refracting power of the fourth lens group G₄. In order to correctthe Petzval sum in a better balance under a wide exposure field bymaking the refracting power of the fourth lens group G₄ strong relativeto the refracting power of the second lens group G₂the lower limit ofthe above condition (2) is preferably set to 0.8, i.e., 0.8<f ₂/f₄.

The condition (3) defines an optimum ratio between the focal length f₅of the fifth lens group G₅ with positive refracting power and thedistance (object-image distance) L from the first object R (reticle orthe like) and the second object W (wafer or the like). This condition(3) is for correcting the spherical aberration, distortion, and Petzvalsum in a good balance while keeping a large numerical aperture. Belowthe lower limit of this condition (3) the refracting power of the fifthlens group G₅ is too strong, so that this fifth lens group G₃ generatesnot only a negative distortion but also a great negative sphericalaberration. Above the upper limit of this condition (3) the refractingpower of the fifth lens group G₅ is too weak, so that the refractingpower of the fourth lens group G₄ with negative refracting powerinevitably also becomes weak therewith, thereby resulting in failing tocorrect the Petzval sum well. The condition (4) defines an optimum ratiobetween the focal length f₆ of the sixth lens group G₆ with positiverefracting power and the distance (object-image distance) L from thefirst object R (reticle etc.) to the second object W (wafer or thelike). This condition (4) is for suppressing generation of higher-orderspherical aberrations and negative distortion while keeping a largenumerical aperture. Below the lower limit of this condition (4) thesixth lens group G₆ itself produces a large negative distortion; abovethe upper limit of this condition (4) higher-order spherical aberrationsappear.

The condition (5) defines an optimum ratio between the overall focallength f_(n) of the second lens L_(M2) with negative refracting power tothe fourth lens L_(M4) with negative refracting power in theintermediate lens group G_(2M) in the second lens group G₂ and the focallength f₂ of the second lens group G₂. It should be noted that theoverall focal length f_(n), stated herein, of the second lens L_(M2)with negative refracting power to the fourth lens L_(M4) with negativerefracting power in the intermediate lens group G_(2M) in the secondlens group G₂ means not only an overall focal length of three lenses,i.e., the second lens L_(M2) to the fourth lens L_(M4), but also anoverall focal length of three or more lenses between the second lensL_(M2) and the fourth lens L_(M4) where there are a plurality of lensesbetween the second lens and the fourth lens.

This condition (5) is for keeping the Petzval sum small whilesuppressing generation of distortion. Below the lower limit of thiscondition (5), a great negative distortion appears because the overallrefracting power becomes too strong, of the negative sublens groupincluding at least three negative lenses of from the second negativelens L_(M2) to the fourth negative lens L_(M4) in the intermediate lensgroup G_(2M) in the second lens group G₂. In order to sufficientlycorrect the distortion and coma, the lower limit of the above condition(5) is preferably set to 0.1, i.e., 0.1<f_(n)/f₂.

Above the upper limit of this condition (5) a great positive Petzval sumresults because the refracting power of the negative sublens groupincluding at least three negative lenses of from the second negativelens L_(M2) to the fourth negative lens L_(M4) in the intermediate lensgroup G_(2M) in the second lens group G₂ becomes too weak. In addition,the refracting power of the third lens group G₃ also becomes weak. Thus,it becomes difficult to construct the projection optical system in acompact arrangement. In older to achieve a sufficiently compact designwhile well correcting the Petzval sum, the upper limit of the abovecondition (5) is preferably set to 1.3, i.e., f_(n)/f₂<1.3.

Further, the following condition (6) is preferably satisfied when theaxial distance from the first object R to the first-object-side focalpoint F of the entire projection optical system is I and the distancefrom the first object R to the second object W is L.

1.0<I/L  (6)

The condition (6) defines an optimum ratio between the axial distance Ifrom the first object R to the first-object-side focal point F of theentire projection optical system and the distance (object-imagedistance) L from the first object R (reticle or the like) to the secondobject W (wafer or the like). Here, the first-object-side focal point Fof the entire projection optical system means an intersecting point ofoutgoing light from the projection optical system with the optical axisafter collimated light beams are let to enter the projection opticalsystem on the second object side in the paraxial region with respect tothe optical axis of the projection optical system and when the lightbeams in the paraxial region are outgoing from the projection opticalsystem.

Below the lower limit of this condition (6) the first-object-sidetelecentricity of the projection optical system will become considerablydestroyed, so that changes of magnification and distortion due to anaxial deviation of the first object R will become large. As a result, itbecomes difficult to faithfully project an image of the first object Rat a desired magnification onto the second object W. In order to fullysuppress the changes of magnification and distortion due to the axialdeviation of the first object R, the lower limit of the above condition(6) is preferably set to 1.7, i.e., 1.7<I/L. Further, in order tocorrect a spherical aberration and a distortion of the pupil both in agood balance while maintaining the compact design of the projectionoptical system, the upper limit of the above condition (6) is preferablyset to 6.8, i.e., I/L<6.8.

Also, it is more preferable that the following condition (7) besatisfied when the focal length of the third lens L., with negativerefracting power in the intermediate lens group G_(2M) in the secondlens group G₂ is f₂₃ and the focal length of the fourth lens L_(M4) withnegative refracting power in the intermediate lens group G_(2M) in thesecond lens group G₂ is f₂₄.

0.07<f₂₄f₂₃<7.  (7)

Below the lower limit of the condition (7) the refracting power of thefourth negative lens L_(M4) becomes strong relative to the refractingpower of the third negative lens L_(M3) so that the fourth negative lensL_(M4) generates a large coma and a large negative distortion. In orderto correct the coma better while correcting the negative distortion, thelower limit of the above condition (7) is preferably set to 0.14, i.e.,0.14<f₂₄f₂₃. Above the upper limit of this condition (7) the refractingpower of the third negative lens L_(M3) becomes relatively strongrelative to the refracting power of the fourth negative lens L_(M4), sothat the third negative lens L_(M3) generates a large coma and a largenegative distortion. In order to correct the negative distortion betterwhile correcting the coma, the upper limit of the above condition (7) ispreferably set to 3.5, i.e., f₂₄/f₂₃<3.5.

Further, it is more preferable that the following condition (8) besatisfied when the focal length of the second lens L_(M2) with negativerefracting power in the intermediate lens group G_(2M) in the secondlens group G₂ is f₂₂ and the focal length of the third lens L_(M3) withnegative refracting power in the intermediate lens group G_(2M) in thesecond lens group G₂ is f₂₃.

0.1<f₂₂/f₂₃<10  (8)

Below the lower limit of the condition (8) the refracting power of thesecond negative lens L_(M2) becomes strong relative to the refractingpower of the third negative lens L_(M3), so that the second negativelens L_(M2) generates a large coma and a large negative distortion. Inorder to correct the negative distortion in a better balance, the lowerlimit of the above condition (8) is preferably set to 0.2, i.e.,0.24<f₂₂/f₂₃. Above the upper limit of this condition (8) the refractingpower of the third negative lens L_(M3) becomes strong relative to therefracting power of the second negative lens L_(M2), so that the thirdnegative lens L_(M3) generates a large coma and a large negativedistortion. In order to correct the negative distortion in a betterbalance while well correcting the coma, the upper limit of the abovecondition (8) is preferably set to 5, i.e., f₂₂/f₂₃<5.

Also, it is more desirable that the following condition (9) be satisfiedwhen the axial distance from the second-object-side lens surface of thefourth lens L_(M4) with negative refracting power in the intermediatelens group G_(2M) in the second lens group G₂ to the first-object-sidelens surface of the rear lens L_(2R) in the second lens group G₂ is Dand the distance from the first object R to the second object W is L:

0.05<D/L<0.4.  (9)

Below the lower limit of the condition (9) it becomes difficult not onlyto secure a sufficient back focus on the second object side but also tocorrect the Petzval sum well. Above the upper limit of the condition (9)a large coma and a large negative distortion appear. Further, forexample, in order to avoid mechanical interference between a reticlestage for holding the reticle as the first object R and the first lensgroup G₁, there are cases that it is preferable to secure a sufficientspace between the first object R and the first lens group G₁, but thereis a problem that to secure the sufficient space will become difficultabove the upper limit of the condition (9).

Also, the fourth lens group G₄ preferably satisfies the followingcondition when the focal length of the fourth lens group G₄ is f₄ andthe distance from the first object R to the second object W is L.

−0.98<f₄/L<−0.005  (10)

Below the lower limit of the condition (10) the correction of sphericalaberration becomes difficult, which is not preferable. Also, above theupper limit of the condition (10), the coma appears, which is notpreferable. In order to well correct the spherical aberration andPetzval sum, the lower limit of the condition (10) is preferably set to−0.078, i.e., −0.078<f₄/L, and further, in order to suppress generationof coma, the upper limit of the condition (10) is preferably set to−0.047, i.e., f₄/L<−0.047.

Further, the second lens group G₂ preferably satisfies the followingcondition when the focal length of the second lens group G₂ is f₂ andthe distance from the first object R to the second object W is L.

−0.8<f₂/L<−0.005  (11)

Here; below the lower limit of the condition (11), a positive Petzvalsum results, which is not preferable. Also, above the upper limit of thecondition (11), a negative distortion appears, which is not preferable.In order to better correct the Petzval sum, the lower limit of thecondition (11) is preferably set to −0.16, i.e., −0.16<f₂/L, and inorder to better correct the negative distortion and coma, the upperlimit of the condition (11) is preferably set to −0.0710, i.e.,f₂/L<−0.0710.

In order to well correct mainly the third-order spherical aberration, itis more desirable that the fifth lens group G₅ with positive refractingpower have the negative meniscus lens L₅₄, and the positive lens L₅₄placed adjacent to the concave surface of the negative meniscus lens L₅₄and having a convex surface opposed to the concave surface of thenegative meniscus lens L₅₄ and that the following condition (12) besatisfied when the radius of curvature of the concave surface in thenegative meniscus lens L₅₄ in the fifth lens group G₃ is r_(5n) and theradius of curvature of the convex surface opposed to the concave surfaceof the negative meniscus lens L₅₄ in the positive lens L₅₃ set adjacentto the concave surface of the negative meniscus lens L₅₄ in the fifthlens group G₅ is r_(5p).

0<(r_(5p)−r_(5n))/(r_(5p)+r_(5n))<1  (12)

Below the lower limit of the condition (12), correction of thethird-order spherical aberration becomes insufficient; conversely, abovethe upper limit of the condition (12), the correction of the third-orderspherical aberration becomes excessive, which is not preferable. Here,in order to correct the third-order spherical aberration better, thelower limit of the condition (12) is more preferably set to 0.01, i.e.,0.01<(r_(5p)−r_(5n))/(r_(5p)+r_(5n)) and the upper limit of thecondition (12) is more preferably set to 0.7, i.e.,(r_(5p)−r_(5n))/(r_(5p)+r_(5n))<0.7.

Here, it is preferred that the negative meniscus lens and the positivelens adjacent to the concave surface of the negative meniscus lens beset between the at least one positive lens in the fifth lens group G₅and the at least one positive lens in the fifth lens group G₅. Forexample, a set of the negative meniscus lens L₅₄ and the positive lensL₅₃ is placed between the positive lenses L₅₂ and L₅₅. This arrangementcan suppress generation of the higher-order spherical aberrations whichtend to appear with an increase in NA.

Also, it is more desirable that the fourth lens group G₄ with negativerefracting power have the front lens L₄₁ placed as closest to the firstobject R and having the negative refracting power with a concave surfaceto the second object W, the rear lens L₄₄ placed as closest to thesecond object W and having the negative refracting power with a concavesurface to the first object R, and at least one negative lens placedbetween the front lens L₄₁ in the fourth lens group G₄ and the rear lensL₄₁ in the fourth lens group G₄ and that the following condition (13) besatisfied when a radius of curvature on the first object side in therear lens L₄₄ placed as closest to the second object W in the fourthlens group G₄ is r_(4F) and a radius of curvature on the second objectside in the rear lens L₄₄ placed as closest to the second object W inthe fourth lens group G₄ is r_(4R).

−1.00≦(r_(4F)−r_(4R))/(r_(4F)+r_(4R))<0  (13)

Below the lower limit of the condition (13), the rear negative lens L₄₄located closest to the second object W in the fourth lens group G₄becomes of a double-concave shape, which generates higher-orderspherical aberrations; conversely, above the upper limit of thecondition (13), the rear negative lens L₄₄ located closest to the secondobject W in the fourth lens group G₄ will have positive refractingpower, which will make the correction of Petzval sum more difficult.

Further, it is desirable that the fifth lens group G₅ have the negativelens L₅₈ with a concave surface to the second object W, on the mostsecond object side thereof. This enables the negative lens L₅₈ locatedclosest to the second object W in the fifth lens group G₅ to generate apositive distortion and a negative Petzval sum, which can cancel anegative distortion and a positive Petzval sum generated by the positivelenses in the fifth lens group G₅.

In this case, in order to suppress the negative distortion withoutgenerating the higher-order spherical aberrations in the lens L₆₁located closest to the first object R in the sixth lens group G₆, it isdesirable that the lens surface closest to the first object R have ashape with a convex surface to the first object R and that the followingcondition be satisfied when a radius of curvature on the second objectside, of the negative lens L₅₈ placed as closest to the second object Win the fifth lens group G₅ is r_(5R) and a radius of curvature on thefirst object side, of the lens L₆₁ placed as closest to the first objectR in the sixth lens group G₆ is r_(6F).

−0.90)<(r_(5R)−r_(5F))/(r_(5R)+r_(5F))<−0.001  (14)

This condition (14) defines an optimum shape of a gas lens formedbetween the fifth lens group G₅ and the sixth lens group G₆ Below thelower limit of this condition (14) a curvature of the second-object-sideconcave surface of the negative lens L₅₈ located closest to the secondobject W in the fifth lens group G₅ becomes too strong, therebygenerating higher-order comas. Above the upper limit of this condition(14) refracting power of the gas lens itself formed between the fifthlens group G₅ and the sixth lens group G₆ becomes weak, so that aquantity of the positive distortion generated by this gas lens becomessmall, which makes it difficult to well correct a negative distortiongenerated by the positive lenses in the fifth lens group G₅. In order tofully suppress the generation of higher-order comas, the lower limit ofthe above condition (14) is preferably set to −0.30, i.e.,−0.30<(r_(5R)−r_(6F))/(r_(5R)+r_(6F)).

Also, it is further preferable that the following condition be satisfiedwhen a lens group separation between the fifth lens group G₅ and thesixth lens group G₆ is d₅₆ and the distance from the first object R tothe second object W is L.

d₅₄L<0.017  (15)

Above the upper limit of this condition (15), the lens group separationbetween the fifth lens group G₅ and the sixth lens group G₆ becomes toolarge, so that a quantity of the positive distortion generated becomessmall. As a result, it becomes difficult to correct the negativedistortion generated by the positive lens in the fifth lens group G₅ ina good balance.

Also, it is more preferable that the following condition be satisfiedwhen a radius of curvature of the lens surface closest m the firstobject R in the sixth lens group G₆ is r_(6F) and an axial distance fromthe lens surface closest to the first object R in the sixth lens groupG₆ to the second object W is d₆.

0.50<d,₆/r_(6F)<1.50  (16)

Below the lower limit of this condition (16), the positive refractingpower of the lens surface closest to the first object R in the sixthlens group G₆ becomes too strong, so that a large negative distortionand a large coma are generated. Above the upper limit of this condition(16), the positive refracting power of the lens surface closest to thefirst object R in the sixth lens group G₆₁ becomes too weak, thusgenerating a large coma. In order to further suppress the generation ofcoma, the lower limit of the condition (16) is preferably set to 0.84,i.e., 0.84<d₆/r_(6F).

It is desirable that the following condition (17) be satisfied when theradius of curvature on the first object side in the negative lens L₅₈located closest to the second object W in the fifth lens group G₅ isr_(5F) and the radius of curvature on the second object side in thenegative lens L₅₈ located closest to the second object W in the fifthlens group G₅ is r_(5R).

0.30<(r_(5F)−r_(5R))/(r_(5F)+r_(5R))<1.28  (17)

Below the lower limit of this condition (17), it becomes difficult tocorrect both the Petzval sum and the coma; above the upper limit of thiscondition (17), large higher-order comas appear, which is notpreferable. In order to further prevent the generation of higher-ordercomas, the upper limit of the condition (17) is preferably set to 0.93,i.e., (r_(5F)−r_(5R))/(r_(5F)+r_(5R))<0.93.

Further, it is desirable that the second-object-side lens surface of thefirst lens L_(M1) with positive refracting power in the intermediatelens group G_(2M) in the second lens group G₂ be of a lens shape with aconvex surface to the second object W, and in this case, it is morepreferable that the following condition (18) be satisfied when therefracting power on the second-object-side lens surface of the firstpositive lens L_(M1) in the intermediate lens group G_(2m) in the secondtens group G₂ is Φ₂₁ and the distance from the first object R to thesecond object W is L.

0.54<1/(Φ₂₁·L)<10  (18)

The refracting power of the second-object-side lens surface, statedherein, of the first lens L_(M1) with positive refracting power in theintermediate lens group G_(2M) is given by the following formula when arefractive index of a medium for the first lens L_(M1) is n₁, arefracting index of a medium in contact with the second-object-side lenssurface of the first lens L_(M1) is n₂, and a radius of curvature of thesecond-object-side lens surface of the first lens is r₂₁.

Φ₂₁=(n₂−n₁)/r₂₁

Below the lower limit of the condition (18), higher-order distortionsappear; conversely, above the upper limit of the condition (18), itbecomes necessary to correct the distortion more excessively by thefirst lens group G₁, which generates the spherical aberration of thepupil, thus being not preferable.

Further, it is more preferable that the following condition (19) besatisfied when the focal length of the first lens L_(M4) with positiverefracting power in the intermediate lens group G_(2M) in the secondlens group G₂ is f₂₁ and the distance from the first object R to thesecond object W is L.

0.230<f_(<)/L<0.40  (19)

Below the lower limit of the condition (19), a positive distortionappears; above the upper limit of the condition (19), a negativedistortion appears, thus not preferable.

Also, the front lens L_(2F) and rear lens L_(2R) in the second lensgroup G₂ preferably satisfy the following condition when the focallength of the front lens L_(2F) placed as closest to the first object Rin the second lens group G₂ and having the negative refracting powerwith a concave surface to the second object W is f_(2F) and the focallength of the rear lens L_(2R) placed as closest to the second object Win the second lens group G₂ and having the negative refracting powerwith a concave surface to the first object R is f_(2R).

0f_(2F)/f_(2R)<18  (20)

The condition (20) defines an optimum ratio between the focal lengthf_(2R) of the rear lens L_(2R) in the second lens group G₂ and the focallength r_(2F) of the front lens L_(2F) in the second lens group G₂.Below the lower limit and above the upper limit of this condition (20),a balance is destroyed for refracting power of the first lens group G₁or the third lens group G₃, which makes it difficult to correct thedistortion well or to correct the Petzval sum and the astigmatismsimultaneously well.

The following specific arrangements are desirable to provide the aboverespective lens groups with sufficient aberration control functions.

First, in order to provide the first lens group G₁ with a function tosuppress generation of higher-order distortions and spherical aberrationof the pupil, the first lens group G₁ preferably has at least twopositive lenses; in order to provide the third lens group G₃ with afunction to suppress degradation of the spherical aberration and thePetzval sum, the third lens group G₃ preferably has at least threepositive lenses; further, in order to provide the fourth lens group G₄with a function to suppress the generation of coma while correcting thePetzval sum, the fourth lens group G₄ preferably has at least threenegative lenses. Further, in order to provide the fifth lens group G₅with a function to suppress generation of the negative distortion andthe spherical aberration, the fifth lens group G₅ preferably has atleast five positive lenses; further, in order to provide the fifth lensgroup G₅ with a function to correct the negative distortion and thePetzval sum, the fifth lens group G₅ preferably has at least onenegative lens. Also, in order to provide the sixth lens group G₆ with afunction to converge light on the second object W without generating alarge spherical aberration, the sixth lens group G₆ preferably has atleast one positive lens.

In addition, in order to correct the Petzval sum better, theintermediate lens group G₂ in the second lens group G₂ preferably hasnegative refracting power.

In order to provide the sixth lens group G₆ with a function to furthersuppress the generation of the negative distortion, the sixth lens groupG₆ is preferably constructed of three or less lenses having at least onesurface satisfying the following condition (21).

1/|ΦL|<20  (21)

where Φ: refracting power of the lens surface;

L: object-image distance from the first object R to the second object W.

The refracting power of the lens surface stated herein is given by thefollowing formula when the radius of curvature of the lens surface is r,a refracting index of a medium on the first object side, of the lenssurface is n₁, and a medium on the second object side, of the lenssurface is n₂.

Φ=(n₂−n₁)/r

Here, if there are four or more lenses having the lens surfacesatisfying this condition (21), the number of lens surfaces with somecurvature, located near the second object W, becomes increased, whichgenerates the distortion, thus not preferable.

The present invention will become more fully understood from thedetailed description given hereinbelow and the accompanying drawingswhich are given by way of illustration only, and thus are not to beconsidered as limiting the present invention.

Further scope of applicability of the present invention will becomeapparent from the detailed description given hereinafter. However, itshould be understood that the detailed description and specificexamples, while indicating preferred embodiments of the invention, aregiven by way of illustration only, since various changes andmodifications within the spirit and scope of the invention will becomeapparent to those skilled in the art form this detailed description.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is drawing to show parameters defined in embodiments of thepresent invention.

FIG. 2 is a drawing to show schematic structure of an exposure apparatusaccording to the present invention.

FIG. 3 is a lens makeup diagram in the first embodiment according to thepresent invention.

FIG. 4 is a lens makeup diagram in me second embodiment according to thepresent invention.

FIG. 5 is a lens makeup diagram in the third embodiment according to thepresent invention.

FIG. 6 is a lens makeup diagram in the fourth embodiment according tothe present invention.

FIG. 7 is a lens makeup diagram in the fifth embodiment according to thepresent invention.

FIG. 8 is a lens makeup diagram in the sixth embodiment according to thepresent invention.

FIG. 9 is various aberration diagrams in the first embodiment accordingto the present invention.

FIG. 10 is various aberration diagrams in the second embodimentaccording to the present invention.

FIG. 11 is various aberration diagrams in the third embodiment accordingto the present invention.

FIG. 12 is various aberration diagrams in the fourth embodimentaccording to the present invention.

FIG. 13 is various aberration diagrams in the fifth embodiment accordingto the present invention.

FIG. 14 is various aberration diagrams in the sixth embodiment accordingto the present invention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

The embodiments according to the present invention will be described indetail in the following. An exposure apparatus of the inventioncomprises a projection optical system as showing in FIG. 2.

First, briefly describing FIG. 2, a reticle R (first object) is placedas a mask on which a predetermined circuit pattern 101 is formed, on theobject plane of a projection optical system PL and a wafer W (secondobject) as a photosensitive substrate on the image plane of theprojection optical system PL, as shown. The reticle R is held on areticle stage RS while the wafer W on a wafer stage WS. Thephotosensitive substrate comprises the wafer W and a photosensitivelayer 100 made of a material as a photoresistor. Further, anillumination optical system IS, which has a light source 102 foremitting exposure light of a predetermined wavelength, for uniformlyilluminating the reticle R is set above the reticle R.

In the above arrangement, light supplied from the illumination opticalsystem IS illuminates the reticle R to form an image of a light sourcein the illumination optical apparatus IS at the pupil position (or aposition of aperture stop AS) of the projection optical system PL, thusachieving the so-called Kohler illumination. Then, through theprojection optical system PL, a pattern image of the thus Köhler-illuminated reticle R is projected (or transferred) onto the waferW through the photosensitive layer 100 by the projection optical systemPL. The techniques relating to an exposure apparatus of the presentinvention ate described for example in U.S. Pat. No. 5,194,993, U.S.Pat. No. 5,097,291 and U.S. Pat. No. 5,245,384 and U.S. patentapplication Ser. No. 299,305, U.S. patent application Ser. No. 255,927and U.S. patent application Ser. No. 226,327.

The present embodiment shows an example of projection optical systemwhere the light source 102 inside the illumination optical system IS isan excimer laser supplying light with exposure wavelength λof 248.4 nm,and FIG. 3 to FIG. 8 are lens makeup diagrams of projection opticalsystems in the first to sixth embodiments according to the presentinvention.

As shown in FIG. 3 to FIG. 8, a projection optical system in eachembodiment has a first lens group G₁ with positive refracting power, asecond lens group G₂ with negative refracting power, a third lens groupG₃ with positive refracting power, a fourth lens group G₄ with negativerefracting power, a fifth lens group G₅ with positive refracting power,and a sixth lens group G₆ with positive refracting power in the namedorder from the side of reticle R as the first object, which isapproximately telecentric on the object side (or on the reticle R side)and on the image side (or on the wafer W side) and which has a reductionmagnification.

The projection optical systems of the respective embodiments shown inFIG. 3 to FIG. 8 are arranged so that the object-image distance (adistance from the object plane to the image plane or a distance from thereticle R to the wafer W) L is 1200, the image-side numerical apertureNA is 0.55, the projection magnification B is 5:1, and the diameter ofthe exposure area on the wafer W is 31.2. In the explanation ofembodiments of the present invention, the image plane means a mainsurface of the wafer W, and the object plane means a surface of thereticle R.

The lens makeup of the first embodiment, as shown in FIG. 3, isspecifically described. The first lens group G₁ has a positive lens L₁₁with a convex surface to the image (positive meniscus lens), a negativelens L₁₂ of a meniscus shape with a convex surface to the object, andtwo positive lenses (L₁₃, L₁₄) of a double-convex shape in the namedorder from the object side.

Next, the second lens group G₂ is composed of a negative meniscus lens(front lens) L_(2F) placed as closest to the object with a concavesurface to the image, a negative meniscus lens (rear lens) L_(2F) placedclosest to the image with a concave surface to the object, and anintermediate lens group G_(2M) placed between the negative meniscus lensL_(2F) located closest to the object in the second lens group G₂ and thenegative meniscus lens L_(2R) located closest to the image in the secondlens group G₂, and having negative refracting power.

The intermediate lens group G_(2M) is composed of a positive lens (firstlens) LV₃₁ of a double-convex shape, a negative lens (second lens)L_(M2) with a surface of a greater curvature to the image, a negativelens (third lens) L_(M3) of a double-concave shape, a negative lens(fourth lens) L_(M4) with a surface of a greater curvature to theobject, and a positive lens (fifth lens) L_(M5) with a surface of agreater curvature to the image in the named order from the object side.

Further, the third lens group G₃ is composed of a positive lens(positive meniscus lens) L₃₁ with a surface of a greater curvature tothe image, a positive lens L₃₂ of a double-convex shape, a positive lens(a positive lens of a double-convex shape) L₃₃ with a convex surface tothe object, and a positive lens L₃₄ with a surface of a greatercurvature to the object, and the fourth lens group G₄ is composed of anegative lens (negative meniscus lens) L₄₁ with a concave surface to theimage, a negative meniscus lens L₄₂ with a concave surface to the image,a negative lens L₄₃ of a double concave surface, and a negative meniscuslens L₄₄ with a concave surface to the object.

Here, an aperture stop AS is set in an optical path between theimage-side concave surface of the negative lens L₄₁ in the fourth lensgroup G₄ and the object-side concave surface of the negative meniscuslens L₄₄.

The fifth lens group G₅ is composed of a positive meniscus lens L₅₁ witha convex surface to the image, a positive lens with a surface of agreater curvature to the image (a positive lens of a double-convexshape) L₅₂, a positive lens L₃₃ of a double-convex shape, a negativemeniscus lens L₃₄ with a concave surface to the object, a positive lensL₅₅ with a surface of a greater curvature to the object, a positivemeniscus lens L₅₆ with a convex surface to the object, a positive lenswith a surface of a greater curvature to the object (positive meniscuslens) L₅₇, and a negative lens with a concave surface to the image(negative meniscus lens) L₅₈, and the sixth lens group G₆ is composedonly of a thick-wall positive lens L₆₁ with a convex surface to theobject.

Here, because the first lens group G₁ in the first embodiment is soarranged that the image-side lens surface of the negative lens L₁₂ ofthe meniscus shape with its convex surface to the object and theobject-side lens surface of the positive lens L₁₃ of double-convex shapehave nearly equal curvatures and are arranged as relatively close toeach other, these two lens surfaces correct the higher-orderdistortions.

In the present embodiment, because the front lens L₃₃ with negativerefracting power, placed closest to the object in the second lens groupG₂, is of the meniscus shape with a concave surface to the image, thegeneration of coma can be reduced; because the first lens L_(M1) withpositive refracting power in the second lens group G_(2M) is of thedouble-convex shape with a convex surface to the image and anotherconvex surface to the object, the generation of spherical aberration ofthe pupil can be suppressed. Further, because the fifth lens L_(M5) withpositive refracting power in the intermediate lens group G_(2M) has theconvex surface opposed to the concave surface of the rear lens L_(2R)with negative refracting power placed on the image side thereof, theastigmatism can be corrected.

Since the fourth lens group G₄ is so arranged that the negative lens L₄₁with its concave surface to the image is placed on the object side ofthe negative lens (negative lens of double-concave shape) L₄₃ and thatthe negative meniscus lens L₄₄ with its concave surface to the object isplaced on the image side of the negative lens (negative lens ofdouble-concave shape) L₄₃, the Petzval sum can be corrected whilesuppressing the generation of coma.

The present embodiment is so arranged that the aperture stop AS isplaced between the image-side concave surface of the negative lens L₄₁and the object-side concave surface of the negative meniscus lens L₄₄ inthe fourth lens group G₄ whereby the lens groups of from the third lensgroup G₃ to the sixth lens group G₆ can be arranged on either side ofthe aperture stop AS with some reduction magnification and withoutdestroying the symmetry so much, which can suppress generation ofasymmetric aberrations, specifically generation of coma or distortion.

Since the positive lens L₅₃ in the fifth lens group G₅ is of thedouble-convex shape where its convex surface is opposed to the negativemeniscus lens L₅₄ and the other lens surface opposite to the negativemeniscus lens L₅₄ is also a convex surface, the generation ofhigher-order spherical aberrations with an increase in NA can besuppressed.

The specific lens makeup of the projection optical system in the secondembodiment as shown in FIG. 4 is similar to that of the first embodimentshown in FIG. 3 and described above but different in that the fourthlens group G₄ is composed of a negative lens with a concave surface tothe image (negative lens of a plano-concave shape) L₄₁, a negativemeniscus lens L₄₂ with a concave surface to the image, a negative lensL₄₃ of a double-concave shape, and a negative meniscus lens L₄₄ with aconcave surface to the object and in that the sixth lens group G₆ iscomposed of a positive lens with a convex surface to the object(positive meniscus lens) L₆₁, and a positive lens with a convex surfaceto the object (positive meniscus lens) L₆₂.

Also in the second embodiment, the image-side lens surface of thenegative meniscus lens L₁₂ with its convex surface to the object and theobject-side lens surface of the positive lens L₁₃ of double-convex shapecorrect the higher-order distortions, similarly as in the above firstembodiment. Further, the sixth lens group G₆ is preferably composed of aless number of constituent lenses in order to suppress a distortiongenerated by the sixth lens group G₆, but if it is difficult to producea thick lens the sixth lens group G₆ may be composed of two lenses as inthe present embodiment. As for the other lens groups (the second lensgroup G₁ to the fifth lens group G₅) in the second embodiment, the samefunctions as in the first embodiment are achieved thereby.

The specific lens makeup of the projection optical system of the thirdembodiment as shown in FIG. 5 is similar to that of the first embodimentshown in FIG. 3 and described previously, but different in that thefirst lens group G₁ is composed of a positive lens with a convex surfaceto the image (positive lens of double-convex shape) L₁₁, a positive lenswith a convex surface to the image (positive lens of double-convexshape) L₁₂, a negative meniscus lens L₁₃ with a concave surface to theobject, and a positive lens L₁₄ of double-convex shape in the namedorder from the object side and in that the third lens group G₃ iscomposed of a positive lens with a surface of a greater curvature to theimage (positive meniscus lens) L₃₁, a positive lens L₃₂ of double-convexshape, a positive lens with a surface of a greater curvature to theobject (positive lens of double-convex shape) L₃₃, and a positive lenswith a convex surface to the object (positive meniscus lens) L₃₄.

In the third embodiment, the image-side lens surface of the positivelens L₁₂ with its convex surface to the image and the object-side lenssurface of the negative meniscus lens L₁₃ with its concave surface tothe object correct the higher-order distortions. As for the other lensgroups (the second lens group G₂, and the fourth lens group G₄ to thesixth lens group G₆) in the third embodiment, the same functions as inthe first embodiment are achieved thereby.

The specific lens makeup of the projection optical system of the fourthembodiment as shown in FIG. 6 is similar to that of the third embodimentshown in FIG. 5 and described above, but different in that the thirdlens group G₃ is composed of a positive lens with a surface of a greatercurvature to the image side (positive meniscus lens) L₃₁, a positivelens L₃₂ of double-convex shape, a positive lens with a convex surfaceto the object (positive lens of double-convex shape) L₃₃, and a positivelens with a surface of a greater curvature to the object (positive lensof double-convex shape) L₃₄, and in that the fourth lens group G₄ iscomposed of a negative lens with a concave surface to the image(negative lens of double-concave shape) L₄₁, a negative meniscus lensL₄₂ with a concave surface to the image, a negative lens L₄₃ ofdouble-concave shape, and a negative meniscus lens L₄₄ with a concavesurface to the object. The present embodiment is also different in thatthe sixth lens group G₆ is composed of a positive lens with a convexsurface to the object (positive meniscus lens) L₆₁ and a positive lenswith a convex surface to the object (positive meniscus lens) L₆₂.

The first lens group G₁ in the fourth embodiment achieves the samefunctions as in the third embodiment described previously, the secondlens group G₂ to the fifth lens group G₅ do the same functions as in thefirst embodiment, and the sixth lens group G₆ does the same functions asin the second embodiment.

The specific lens makeup of the projection optical system of the fifthembodiment shown in FIG. 7 is similar to that of the first embodimentshown in FIG. 3 and described previously, but different in that thefirst lens group G₁ is composed of a positive lens with a convex surfaceto the image (positive lens of double-convex shape) L₁₁, a negative lenswith a concave surface to the image (negative lens of double-concaveshape) L₁₂ and two positive lenses (L₁₃, L₁₄) of double-convex shape inthe named order from the object side. It is also different in that thethird lens group G₃ is composed of a positive lens with a surface of agreater curvature to the image (positive meniscus lens) L₃₁, a positivelens L₃₂ of double-convex shape, a positive lens with a convex surfaceto the object (positive meniscus lens) L₃₃, and a positive lens with asurface of a greater curvature to the object (positive lens ofdouble-convex shape) L₃₄. It is also different from the lens makeup ofthe first embodiment in that the fourth lens group G₄ is composed of anegative lens with a concave surface to the image (negative lens ofdouble-concave shape) L₄₁, a negative meniscus lens L₄₂ with a concavesurface to the image, a negative lens L₄₃ of double-concave shape, and anegative meniscus lens L₄₄ with a concave surface to the object. It isfurther different in that the fifth lens group G₅ is composed of apositive meniscus lens L₅₁ with a convex surface to the image, apositive lens with a surface of a greater curvature to the image(positive meniscus lens) L₅₂, a positive lens L₅₃ of double-convexshape, a negative meniscus lens L₅₄ with a concave surface to theobject, a positive lens with a surface of a greater curvature to theobject (positive meniscus lens) L₅₅, a positive meniscus lens L₅₆ with aconvex surface to the object, a positive lens with a surface of agreater curvature to the object (positive meniscus lens) L₅₇, and anegative lens with a concave surface to the image (negative meniscuslens) L₅₈.

In the fifth embodiment the higher-order distortions are corrected by apair of the image-side convex surface of the positive lens L₁₁ and theobject-side concave surface of the negative lens L₁₂ and a pair of theimage-side concave surface of the negative lens L₁₂ and the object-sideconvex surface of the positive lens L₁₃. As for the other lens groups(the second to the fifth lens groups G₂ to G₅) in the fifth embodiment,the same functions as in the first embodiment are achieved thereby.

The sixth embodiment shown in FIG. 8 has the same lens makeup as that ofthe fifth embodiment as described above, and achieves the substantiallysame functions as in the fifth embodiment.

Now, Table 1 to Table 12 listed below indicate values of specificationsand numerical values corresponding to the conditions in the respectiveembodiments according to the present invention.

In the tables, left end numerals represent lens surfaces located in thenamed order from the object side (reticle side), r curvature radii oflens surfaces, d lens surface separations, n refractive indices ofsynthetic quartz SiO₂ for the exposure wavelength λ of 248.4 nm, d0 adistance from the first object (reticle) to the lens surface (first lenssurface) closest to the object (reticle) in the first lens group G₁, Bfa distance from the lens surface closest to the image (wafer) in thesixth lens group G₆ to the image plane (wafer surface), B a projectionmagnification of the projection optical system, NA the image-sidenumerical aperture of the projection optical system, L the object-imagedistance from the object plane (reticle surface) to the image plane(wafer surface), I the axial distance from the first object (reticle) tothe first-object-side focal point of the entire projection opticalsystem (where the first-object-side focal point of the entire projectionoptical system means an intersecting point of exit light with theoptical axis after collimated light beams in the paraxial region withrespect to the optical axis of the projection optical system are let toenter the projection optical system on the second object side and whenthe light beams in the paraxial region are outgoing from the projectionoptical system), f₁ the focal length of the first lens group G₁, f₂ thefocal length of the second lens group G₂, f₃ the focal length of thethird lens group G₃, f₄ the focal length of the fourth lens group G₄, f₅the focal length of the fifth lens group G₅, f₆ the focal length of thesixth lens group G₆, f_(n) the overall focal length of from the secondlens to the fourth lens, f_(2F) the focal length of the front lensplaced closest to the first object in the second lens group and havingnegative refracting power with its concave surface to the second object,f_(2R) the focal length of the rear lens placed closest to the secondobject in the second lens group and having negative refracting powerwith its concave surface to the first object, f₂₁ the focal length ofthe first lens with positive refracting power in the intermediate tensgroup in the second lens group, f₂₂ the focal length of the second lenswith negative refracting power in the second lens group, f₂₃ the focallength of the third lens with negative refracting power in the secondlens group, f₂₄ the focal length of the fourth lens with negativerefracting power in the second lens group, Φ₂₁ the refracting power ofthe second-object-side lens surface of the first lens with positiverefracting power in the intermediate lens group G₂₁ in the second lensgroup, D the axial distance from the second-object-side lens surface ofthe fourth lens in the intermediate lens group in the second lens groupto the first-object-side lens surface of the rear lens in the secondlens group, r_(5n) the curvature radius of the concave surface in thenegative meniscus lens in the fifth lens group, r_(5p) the curvatureradius of the convex surface opposed to the concave surface of thenegative meniscus lens, in the positive lens placed adjacent to theconcave surface of the negative meniscus lens in the fifth lens group,f_(4F) the first-object-side curvature radius in the rear lens placedclosest to the second object in the fourth lens group, r_(4R) thesecond-object-side curvature radius in the rear lens placed closest tothe second object in the fourth lens group, r_(5F) the first-object-sidecurvature radius in the second lens placed closest to the second objectin the fifth lens group, r_(5R) the second-object-aide curvature radiusof the negative lens placed closest to the second object in the fifthlens group, r_(6F) the first-object-side curvature radius of the lensplaced closest to the first object in the sixth lens group, d₅₆ the lensgroup separation between the fifth lens group and the sixth lens group,d₆ the axial distance from the lens surface closest to the first objectin the sixth lens group to the second object, and φ the refracting powerof the lens surface of the lens or lenses forming the sixth lens group.

TABLE 1 First Embodiment d_(o) = 105.33208 B = 1/5 NA = 0.55 Bf =28.62263 L = 1200 r d n 1 −821.91920 23.00000 1.50839 2 −391.9338520.81278 3 334.30413 20.00000 1.50839 4 239.01947 7.92536 5 267.6651428.00000 1.50839 6 −618.41676 1.04750 7 337.90351 23.00000 1.50839 8−1279.67000 0.97572 9 200.03116 24.00000 1.50839 10 105.22457 22.0471311 219.65515 26.00000 1.50839 12 −546.12474 1.10686 13 4788.4000217.00000 1.50839 14 125.70412 20.76700 15 −381.52610 12.90000 1.50839 16134.36400 26.88549 17 −127.38724 15.00000 1.50839 18 433.13808 52.3390619 1260.83000 35.00000 1.50839 20 −178.61526 14.91509 21 −129.7167422.80000 1.50839 22 −202.88016 2.79782 23 −4128.12000 27.00000 1.5083924 −299.28737 2.87255 25 556.52963 28.00000 1.50839 26 −928.168482.49780 27 367.82207 30.00000 1.50839 28 −4438.51001 1.64701 29220.29374 31.00000 1.50839 30 −1698.69000 3.60527 31 4987.07001 21.000001.50839 32 146.02635 11.76890 33 216.75649 17.00000 1.50839 34 161.0129031.54706 35 −206.90673 15.90000 1.50839 36 309.12541 56.09046 37−183.11187 18.00000 1.50839 38 −894.17440 6.28784 39 −409.02115 23.000001.50839 40 −215.49999 1.14438 41 3139.57999 23.00000 1.50839 42−320.84882 2.92283 43 445.47649 38.00000 1.50839 44 −348.37380 11.4349845 −229.01731 27.00000 1.50839 46 −352.88961 1.10071 47 370.9124225.00000 1.50839 48 −3446.41000 4.83032 49 178.35450 32.00000 1.50839 50471.60399 3.29194 51 137.85195 39.90000 1.50839 52 331.09797 9.82671 53520.77561 23.00000 1.50839 54 80.26937 7.04896 55 90.74309 71.000001.50839 56 1836.49001

TABLE 2 Values corresponding to the Conditions in the First Embodiment(1) f₁/f₃ = 1.47 (2) f₂f₄ = 1.31 (3) f₅/L = 0.0988 (4) f₆/L = 0.154 (5)f_(n)/>f₂ = 0.589 (6) I/L = 2.33 (7) f₂₁/f₂₃ = 0.990 (8) f₂₂/f₂₃ = 1.31(9) D/L = 0.0852 (10) f₁/L = −0.0638 (11) f₂/L = −0.0834 (12) (r_(5p) −r_(5n))/(r_(5p) + r_(5n)) = 0.207 (13) (r_(1F) − r_(1R))/(r_(4F) +r_(4R)) = −0.660 (14) (r_(5R) − r_(6F))/(r_(5R) + r_(6F)) = −0.0613 (15)d₅₆/L = 0.00587 (16) d₆/r_(6F) = 1.10 (17) (r_(5F) − r_(5R))/(r_(5F) +r_(5R)) = 0.733 (18) 1/(φ₂₁ · L) = 0.895 (19) f₂₁/L = 0.260 (20)f_(2F)/f_(2R) = 0.604

TABLE 3 Second Embodiment d_(o) = 103.54346 B = 1/5 NA = 0.55 Bf =29.06029 L = 1200 r d n 1 −2191.4599 23.00000 1.50839 2 −443.1937818.81278 3 372.47246 20.00000 1.50839 4 259.89086 7.92536 5 296.0555726.00000 1.50839 6 −527.24081 1.04750 7 478.04893 27.00000 1.50839 8−948.34609 0.97572 9 210.20717 24.00000 1.50839 10 107.85292 24.04713 11241.18600 26.00000 1.50839 12 −438.52759 1.10686 13 −1434.49001 17.000001.50839 14 132.17373 18.76700 15 −370.22109 12.90000 1.50839 16137.36441 26.88549 17 −131.18161 15.00000 1.50839 18 450.35044 53.0340719 1459.21001 35.00000 1.50839 20 −182.99101 14.91509 21 −132.8856122.80000 1.50839 22 −199.28914 2.79782 23 −5536.72998 27.00000 1.5083924 −310.674563 2.87255 25 528.12523 28.00000 1.50839 26 −1200.550002.49780 27 320.15215 30.00000 1.50839 28 −2820.19000 1.64701 29239.46093 31.00000 1.50839 30 −2425.69000 5.60527 31 ∞ 21.00000 1.5083932 148.13116 9.76890 33 207.41773 17.00000 1.50839 34 155.42831 31.5470635 −218.29971 15.90000 1.50839 36 304.21175 56.74759 37 −175.6663518.00000 1.50839 38 −1130.86000 6.28784 39 −485.73656 23.00000 1.5083940 −216.43349 1.14438 41 2806.14999 23.00000 1.50839 42 −316.006202.92283 43 437.43410 38.00000 1.50839 44 −355.32964 11.43498 45−235.73758 27.00000 1.50839 46 −360.50104 1.10071 47 410.57953 25.000001.50839 48 −3698.22000 4.83032 49 178.15299 32.00000 1.50839 50506.53177 3.29194 51 137.46544 39.90000 1.50839 52 328.51597 9.82671 53544.32105 23.00000 1.50839 54 81.70638 7.04896 55 92.81520 34.000001.50839 56 511.57718 2.00000 57 482.15006 35.00000 1.50839 58 1631.30000

TABLE 4 Values corresponding to the Conditions in the Second Embodiment(1) f₁/f₃ = 1.50 (2) f₂/f₄ = 1.39 (3) f₅/L = 0.0971 (4) f₆/L = 0.158 (5)f_(n)/>f₂ = 0.568 (6) I/L = 2.21 (7) f₂₁/f₂₃ = 1.01 (8) f₂₂/f₂₃ = 1.21(9) D/L = 0.0858 (10) f₄/L = −0.0621 (11) f₂/L = −0.0861 (12) (r_(5p) −r_(5n))/(r_(5p) + r_(5n)) = 0.202 (13) (r_(4F) − r_(4R))/(r_(4F) +r_(4R)) = −0.731 (14) (r_(5R) − r_(6F))/(r_(5R) + r_(6F)) = −0.0637 (15)d₅₆/L = 0.00587 (16) d₆/r_(6F) =1.08 (17) (r_(5F) − r_(5R))/(r_(5F) +r_(5R)) = 0.739 (18) 1/(φ₂₁ · L) = 0.719 (19) f₂₁ /L = 0.239 (20)f_(2F)/f_(2R) = 0.533

TABLE 5 Third Embodiment d_(o) = 104.69561 B = 1/5 NA = 0.55 Bf =29.13809 L = 1200 r d n 1 −1364.36000 23.00000 1.50839 2 −612.1741120.81278 3 699.63988 24.00000 1.50839 4 −301.81026 7.92536 5 −248.0015020.00000 1.50839 6 −614.52792 1.04750 7 332.05244 27.00000 1.50839 8−582.52759 0.97572 9 232.12759 24.00000 1.50839 10 110.33434 27.04713 11230.79590 23.00000 1.50839 12 −359.85171 1.10686 13 −1275.75999 17.000001.50839 14 127.98361 18.76700 15 −569.83204 12.90000 1.50839 16140.20359 26.88549 17 −108.76770 15.00000 1.50839 18 593.61218 51.8678919 2324.85999 35.00000 1.50839 20 −163.53564 14.91509 21 −121.2660322.80000 1.50839 22 −192.12364 2.79782 23 −4480.40997 27.00000 1.5083924 −297.83388 2.87255 25 445.50685 28.00000 1.50839 26 −877.282962.49780 27 422.96766 27.00000 1.50839 28 −1570.03000 1.64701 29230.95785 31.00000 1.50839 30 3000.00000 8.60527 31 1800.00000 21.000001.50839 32 138.38357 9.76890 33 191.56081 17.00000 1.50839 34 157.7011931.54706 35 −217.22866 15.90000 1.50839 36 294.71194 56.69427 37−173.19975 18.00000 1.50839 38 −973.64548 6.28784 39 −467.87775 23.000001.50839 40 −215.12034 1.14438 41 2688.16000 23.00000 1.50839 42−320.45010 2.92283 43 441.22198 40.00000 1.50839 44 −347.09282 9.4349545 −239.46132 27.00000 1.50839 46 −386.98159 1.10071 47 381.4167928.00000 1.50839 48 −2576.25000 4.83032 49 186.44642 29.00000 1.50839 50570.80649 3.29194 51 138.75412 39.90000 1.50839 52 316.26440 9.82671 53504.37073 23.00000 1.50839 54 80.26770 7.04896 55 91.17058 71.000001.50839 56 1553.61000

TABLE 6 Values corresponding to the Conditions in the Third Embodiment(1) f₁/f₃ = 1.46 (2) f₂/f₄ = 1.27 (3) f₅/L = 0.0977 (4) f₆/L = 0.156 (5)f_(n)/>f₂ = 0.591 (6) I/L = 2.93 (7) f₂₁/f₂₃ = 0.816 (8) f₂₂/f₂₃ = 1.04(9) D/L = 0.0848 (10) f₄/L = −0.0645 (11) f₂/L = −0.0816 (12) (r_(5p) −r_(5n))/(r_(5p) + r_(5n)) = 0.184 (13) (r_(4F) − r_(4R))/(r_(4F) +r_(4R)) = −0.698 (14) (r_(5R) − r_(6F))/(r_(5R) + r_(6F)) = −0.0636 (15)d₅₆/L = 0.00587 (16) d₆/r_(6F) =1.10 (17) (r_(5F) − r_(5R))/(r_(5F) +r_(5R)) = 0.725 (18) 1/(φ₂₁ · L) = 0.590 (19) f₂₁ /L = 0.234 (20)f_(2F)/f_(2R) = 0.611

TABLE 7 Fourth Embodiment d_(o) = 104.71662 B = 1/5 NA = 0.55 Bf =28.76320 L = 1200 r d n 1 955.26796 23.00000 1.50839 2 −675.5314820.81278 3 788.04209 24.00000 1.50839 4 −320.77870 7.92536 5 −261.9984720.00000 1.50839 6 −613.40707 1.04750 7 343.77433 27.00000 1.50839 8−614.74297 0.97572 9 220.40014 24.00000 1.50839 10 111.87626 27.04713 11230.00000 23.00000 1.50839 12 −410.00000 1.10686 13 −2449.05000 17.000001.50839 14 118.87129 18.76700 15 −632.77988 12.90000 1.50839 16143.15226 26.88549 17 −108.88557 15.00000 1.50839 18 595.22400 52.2256519 1526.21000 35.00000 1.50839 20 −168.52598 14.91509 21 −120.8719622.80000 1.50839 22 −188.10351 2.79782 23 −3191.22000 27.00000 1.5083924 −296.62706 2.87255 25 697.45117 28.00000 1.50839 26 −699.271582.49780 27 358.82454 27.00000 1.50839 28 −2986.21000 1.64701 29223.50971 31.00000 1.50839 30 −1510.16000 8.60527 31 −3596.8100021.00000 1.50839 32 141.11696 9.76890 33 194.35300 17.00000 1.50839 34157.66411 31.54706 35 −209.96142 15.90000 1.50839 36 307.10883 56.6862437 −175.13115 18.00000 1.50839 38 −1162.95000 6.28784 39 −505.3816623.00000 1.50839 40 −213.39177 1.14438 41 3114.45000 23.00000 1.50839 42−339.03822 2.92283 43 460.54759 40.00000 1.50839 44 −326.27369 9.4349845 −231.89968 27.00000 1.50839 46 −372.57441 1.10071 47 390.0367828.00000 1.50839 48 −1994.66000 4.83032 49 182.18377 29.00000 1.50839 50525.45378 3.29194 51 138.67730 39.90000 1.50839 52 312.43609 9.82671 53511.48346 23.00000 1.50839 54 81.45867 7.04896 55 93.64185 34.000001.50839 56 934.34560 2.00000 57 826.70065 35.00000 1.50839 58 1680.21000(Bf)

TABLE 8 Values corresponding to the Conditions in the Fourth Embodiment(1) f₁/f₃ = 1.55 (2) f₂/f₄ = 1.39 (3) f₅/L = 0.0975 (4) f₆/L = 0.158 (5)f_(n)/>f₂ = 0.576 (6) I/L = 3.05 (7) f₂₄/f₂₃ = 0.787 (8) f₂₂/f₂₃ = 0.974(9) D/L = 0.0851 (10) f₄/L = −0.0606 (11) f₂/L = −0.0843 (12) (r_(5p) −r_(5n))/(r_(5p) + r_(5n)) = 0.169 (13) (r_(4F) − r_(4R))/(r_(4F) +r_(4R)) = −0.738 (14) (r_(5R) − r_(6F))/(r_(5R) + r_(6F)) = −0.0695 (15)d₅₆/L = 0.00587 (16) d₆/r_(6F) =1.07 (17) (r_(5F) − r_(5R))/(r_(5F) +r_(5R)) = 0.725 (18) 1/(φ₂₁ · L) = 0.672 (19) f₂₁ /L = 0.244 (20)f_(2F)/f_(2R) = 0.642

TABLE 9 Fifth Embodiment d_(o) = 105.99385 B = 1/5 NA = 0.55 Bf =28.96856 L = 1200 r d n 1 723.32335 28.00000 1.50839 2 −571.270292.00000 3 −8470.94995 20.00000 1.50839 4 324.13159 7.92536 5 360.4411028.00000 1.50839 6 −432.97069 1.04750 7 397.04484 27.00000 1.50839 8−825.96923 0.97572 9 214.74004 31.00000 1.50839 10 110.51892 24.04713 11229.41181 26.00000 1.50839 12 −396.52854 1.10686 13 −1014.34000 17.000001.50839 14 137.90605 18.76700 15 −418.55207 12.90000 1.50839 16138.89479 26.88549 17 −133.71351 15.00000 1.50839 18 561.35918 52.5378219 1381.31000 35.00000 1.50839 20 −188.69074 14.91509 21 −134.0334522.80000 1.50839 22 −198.69180 2.79782 23 −3029.37000 27.00000 1.5083924 −333.96362 2.87255 25 905.53484 28.00000 1.50839 26 −611.800052.49780 27 254.70879 30.00000 1.50839 28 3936.53000 1.64701 29 239.5166931.00000 1.50839 30 −1238.94000 5.60527 31 −2379.42001 21.00000 1.5083932 150.43068 9.76890 33 209.21387 17.00000 1.50839 34 149.67785 31.5470635 −199.55198 15.90000 1.50839 36 341.76300 57.70880 37 −170.7530018.00000 1.50839 38 −3700.60999 6.28784 39 −1025.75000 23.00000 1.5083940 −212.37919 1.14438 41 −3009.97000 23.00000 1.50839 42 −312.336472.92283 43 401.05778 37.00000 1.50839 44 −361.42967 12.43498 45−231.63315 27.00000 1.50839 46 −319.48896 1.10071 47 355.64919 25.000001.50839 48 3678.53000 4.83032 49 177.43364 32.00000 1.50839 50 553.839643.29194 51 137.68248 39.90000 1.50839 52 330.86342 9.82671 53 587.4274723.00000 1.50839 54 81.23164 7.04896 55 93.74477 71.00000 1.50839 561555.42999

TABLE 10 Values corresponding to the Conditions in the Fifth Embodiment(1) f₁/f₃ = 1.58 (2) f₂/f₄ = 1.63 (3) f₅/L = 0.0923 (4) f₆/L = 0.161 (5)f_(n)/>f₂ = 0.554 (6) I/L = 2.27 (7) f₂₄/f₂₃ = 1.04 (8) f₂₂/f₂₃ = 1.17(9) D/L = 0.0853 (10) f₄/L = −0.0564 (11) f₂/L = −0.0919 (12) (r_(5p) −r_(5n))/(r_(5p) + r_(5n)) = 0.219 (13) (r_(4F) − r_(4R))/(r_(4F) +r_(4R)) = −0.912 (14) (r_(5R) − r_(6F))/(r_(5R) + r_(6F)) = −0.0715 (15)d₅₆/L = 0.00587 (16) d₆/r_(6F) =1.07 (17) (r_(5F) − r_(5R))/(r_(5F) +r_(5R)) = 0.757 (18) 1/(φ₂₁ · L) = 0.650 (19) f₂₁ /L = 0.242 (20)f_(2F)/f_(2R) = 0.541

TABLE 11 Sixth Embodiment d_(o) = 105.91377 B = 1/5 NA = 0.55 Bf =28.96856 L = 1200 r d n 1 723.70616 28.00000 1.50839 2 −571.493751.98414 3 −8427.42000 20.00000 1.50839 4 324.06902 8.06076 5 360.4996528.00000 1.50839 6 −432.97519 1.01484 7 397.09644 27.00000 1.50839 8−826.03537 0.88781 9 214.74356 31.00000 1.50839 10 110.51666 24.03750 11229.41181 26.00000 1.50839 12 −396.60684 1.12963 13 −1014.38000 17.000001.50839 14 137.92108 18.76756 15 −418.59453 12.90000 1.50839 16138.90550 26.88587 17 −133.71351 15.00000 1.50839 18 561.20342 52.5198919 1381.31000 35.00000 1.50839 20 −188.68876 14.85490 21 −134.0358122.80000 1.50839 22 −198.68592 2.89585 23 −3029.37000 27.00000 1.5083924 −333.96362 2.88769 25 905.64444 28.00000 1.50839 26 −611.804282.47699 27 254.70879 30.00000 1.50839 28 3936.53000 1.61920 29 239.5166931.00000 1.50839 30 −1238.94000 5.60156 31 −2379.42000 21.00000 1.5083932 150.42879 9.73510 33 209.20275 16.99160 1.50839 34 149.68297 31.5470635 −199.55198 15.90229 1.50839 36 341.76300 57.70389 37 −170.7530018.00000 1.50839 38 −3700.61000 6.28293 39 −1025.75000 23.00000 1.5083940 −212.37919 1.14438 41 −3009.97000 23.00000 1.50839 42 −312.336472.89661 43 401.05778 37.00000 1.50839 44 −361.42967 12.47918 45−231.65257 27.00000 1.50839 46 −319.51171 1.23912 47 355.64919 25.000001.50839 48 3678.53000 4.82925 49 177.43453 32.00000 1.50839 50 553.983393.26768 51 137.68248 39.90000 1.50839 52 330.86342 9.82671 53 587.4274723.00000 1.50839 54 81.23164 7.04896 55 93.74477 71.00000 1.50839 561555.43000 (Bf)

TABLE 12 Values corresponding to the Conditions the Sixth Embodiment (1)f₁/f₃ = 1.58 (2) f₂/f₄ = 1.63 (3) f₅/L = 0.0924 (4) f₆/L = 0.161 (5)f₇/f₉ = 0.554 (6) I/L = 2.25 (7) f₂₄/f₂₃ = 1.04 (8) f₂₂/f₂₃ = 1.17 (9)D/L = 0.0853 (10) f₁/L = −0.0564 (11) f₂/L = −0.0919 (12) (r_(5p) −r_(5n))/(r_(5p) + r_(5n)) = 0.218 (13) (r_(4F) − r_(4R))/(r_(4F) +r_(4R)) = −0.911 (14) (r_(5R) − r_(6F))/(r_(5R) + r_(6F)) = −0.0715 (15)d₅₆/L = 0.00587 (16) d₆/r_(6F) = 1.07 (17) (r_(5F) − r_(5R))/(r_(5F + r)_(5R)) = 0.757 (18) 1/(φ₂₁ · L) = 0.650 (19) f₂₁/L = 0.242 (20)f_(2F)/f_(2R) = 0.541

In the above-described first embodiment, 1/|φL|=0.149 for theobject-side lens surface of the positive lens L₆₁, thus satisfying thecondition (21). In the second embodiment, 1/|φL|=0.152 for theobject-side lens surface of the positive lens L₆₁ and 1/|φL|=0.709 forthe object-side lens surface of the positive lens L₆₂, thus satisfyingthe condition (21). In the third embodiment, 1/|φL|=0.149 for theobject-side lens surface of the positive lens L₆₁ thus satisfying thecondition (21). In the fourth embodiment, 1/|φL|=0.153 for theobject-side lens surface of the positive lens L₆₁ and 1/|φL|=1.36 forthe object-side lens surface of the positive lens L₆₂, thus satisfyingthe condition (21). In the fifth embodiment, 1/|φL|=0.153 for theobject-side lens surface of the positive lens L₆₁, thus satisfying thecondition (21). In the sixth embodiment, 1/|φL|=0.154 for theobject-side lens surface of the positive lens L₆₁ thus satisfying thecondition (21). Therefore, the sixth lens group G₆ in each embodiment iscomposed of three or less lenses having the lens surface(s) satisfyingthe condition (21).

From the above values of specifications for the respective embodiments,it is understood that the telecentricity is achieved on the object side(on the reticle side) and on the image side (on the wafer side) whilemaintaining a relatively wide exposure area and a large numericalaperture in each embodiment.

FIG. 9, FIG. 10, FIG. 11, FIG. 12, FIG. 13, and FIG. 14 show aberrationdiagrams of various aberrations in the first to the sixth embodimentsaccording to the present invention.

Here, in each aberration diagram, NA represents the numerical apertureof the projection optical system and Y the image height. In eachaberration diagram of astigmatism, the dotted line represents ameridional image surface (meridional image surface) and the solid line asagittal image surface (sagittal image surface).

From the comparison of the aberration diagrams, it is seen that thevarious aberrations are corrected in a good balance in each embodiment,particularly the distortion is corrected very well over the entire imageup to a nearly zero state and the high-resolving-power projectionoptical system is achieved with a large numerical aperture.

Although the above embodiments showed the examples where the excimerlaser for supplying the light of 248.4 nm was used as a light source, itis needless to mention that, without a need to be limited to theexamples, the present invention can be applied to systems using extremeultraviolet light sources such as an excimer laser for supplying thelight of 193 nm, mercury arc lamps for supplying the light of the g-line(436 nm) or the i-line (365 nm), or light sources for supplying thelight in the ultraviolet region other than those.

In the embodiments neither of the lenses constituting the projectionoptical system is a compound lens, and either of them is made of asingle optical material, i.e., of quartz (SiO₂). Here, a cost reductioncan be achieved because a single optical material forms each lens in theabove embodiments. However, if the exposure light has a certain halfwidth, a chromatic aberration can be corrected by a combination ofquartz (SiO₂) and fluorite (CaF₂) or by a combination of other opticalmaterials. Further, if the exposure light source supplies the exposurelight in a wide band, the chromatic aberration can be corrected by acombination of plural types of optical materials.

As described above, the exposure apparatus relating to the presentinvention has achieved the projection optical systems which arebitelecentric optical systems with a relatively wide exposure area keptand which are high-resolving-power projection optical systems in whichthe various aberrations are corrected in a good balance and which have alarge numerical aperture. Particularly, the distortion is corrected verywell in the projection optical systems of the present invention.Accordingly, the present invention can enjoy an extreme reduction ofimage stress, because the distortion is also corrected very well inaddition to the achievement of the bitelecentricity.

From the invention thus described, it will be obvious that the inventionmay be varied in many way. Such variations are not to be regarded as adeparture from the spirit and scope of the invention, and all suchmodifications as would be obvious to one skilled in the art are intendedto be included within the scope of the following claims.

The basic Japanese Application No. 6-311050 (311050/1994) filed on Dec.14, 1994 is hereby incorporated by reference.

What is claimed is:
 1. A projection optical system located between afirst object and a second object, for projecting an image of the firstobject onto the second object, said projection optical system having: afirst lens group with positive refracting power, said first lens groupbeing placed between the first and second objects; a second lens groupwith negative refracting power, said second lens group being placedbetween said first lens group and the second object; a third lens groupwith positive refracting power, said third lens group being placedbetween said second lens group and the second object; a fourth lensgroup with negative refracting power, said fourth lens group beingplaced between said third lens group and the second object; a fifth lensgroup with positive refracting power, said fifth lens group being placedbetween said fourth lens group and the second object; and a sixth lensgroup with positive refracting power, said six lens group being placedbetween said fifth lens group and the second object, wherein said firstlens group includes at least two positive lenses, said third lens groupincludes at least three positive lenses, said fourth lens group includesat least three negative lenses, said fifth lens group includes at leastfive positive lenses and at least one negative lens, and said sixth lensgroup includes at least one positive lens, wherein said second lensgroup comprises a front lens placed as closest to the first object andhaving negative refracting power with a concave surface to the secondobject, a rear lens placed as closest to the second object and havingnegative refracting power with a concave surface to the first object,and an intermediate lens group placed between said front and rear lensesin said second lens group, and wherein said intermediate lens group hasa first lens with positive refracting power, a second lens with negativerefracting power, a third lens with negative refracting power, and afourth lens with negative refracting power in the named order from thefirst object toward the second object.
 2. A projection optical systemaccording to claim 1, wherein the first lens with positive refractingpower in said intermediate lens group in said second lens group has alens shape with a convex surface to the second object.
 3. A projectionoptical system according to claim 2, wherein said fourth lens groupcomprises a front lens placed as closest to the first object and havingnegative refracting power with a concave surface to the second object, arear lens placed as closest to the second object and having negativerefracting power with a concave surface to the first object, and atleast one negative lens placed between said front lens in said fourthlens group and said rear lens in said fourth lens group.
 4. A projectionoptical system according to claim 3, wherein said fifth lens groupcomprises a negative meniscus lens, and a positive lens placed asadjacent to a concave surface of said negative meniscus lens and havinga convex surface opposed to the concave surface of said negativemeniscus lens.
 5. A projection optical system according to claim 4,wherein said negative meniscus lens and said positive lens adjacent tothe concave surface of said negative meniscus lens are placed betweenpositive lenses in said fifth lens group.
 6. A projection optical systemaccording to claim 5, wherein said fifth lens group comprises a negativelens placed as closest to the second object and having a concave surfaceopposed to the second object.
 7. A method for fabricating at leastsemiconductor devices or liquid crystal display devices by using aprojection optical system according to claim 5, comprising the steps of:illuminating a mask prepared as said first object with light of apredetermined wavelength, said mask being formed with a predeterminedpattern thereon; and projecting an image of the pattern on said maskonto a photosensitive substrate prepared as said second object throughsaid projection optical system, thereby performing an exposure process.8. A projection optical system according to claim 6, wherein said sixthlens group comprises a lens placed as closest to the first object andhaving a convex surface opposed to the first object.
 9. A method forfabricating at least semiconductor devices or liquid crystal displaydevices by using a projection optical system according to claim 8,comprising the steps of: illuminating a mask prepared as said firstobject with light of a predetermined wavelength, said mask being formedwith a predetermined pattern thereon; and projecting an image of thepattern on said mask onto a photosensitive substrate prepared as saidsecond object through said projection optical system, thereby performingan exposure process.
 10. A projection optical system according to claim1, wherein said fourth lens group comprises a front lens placed asclosest to the first object and having negative refracting power with aconcave surface to the second object, a rear lens placed as closest tothe second object and having a negative refracting power with a concavesurface to the first object, and at least one negative lens placedbetween said front lens in said fourth lens group and said rear lens insaid fourth lens group.
 11. A projection optical system according toclaim 1, wherein said fifth lens group comprises a negative meniscuslens, and a positive lens placed as adjacent to a concave surface ofsaid negative meniscus lens and having a convex surface opposed to theconcave surface of said negative meniscus lens.
 12. A method forfabricating at least semiconductor devices or liquid crystal displaydevices by using a projection optical system according to claim 1,comprising the steps of: illuminating a mask prepared as said firstobject with light of a predetermined wavelength, said mask being formedwith a predetermined pattern thereon; and projecting an image of thepattern on said mask onto a photosensitive substrate prepared as saidsecond object through said projection optical system, thereby performingan exposure process.
 13. A projection optical system located between afirst object and a second object, said projection optical system havinga first lens group with positive refracting power, a second lens groupwith negative refracting power, a third lens group with positiverefracting power, a fourth lens group with negative refracting power, afifth lens group with positive refracting power, and a sixth lens groupwith positive refracting power in the named order from the first objecttoward the second object, wherein said first lens group includes atleast two positive lenses, said third lens group includes at least threepositive lenses, said fourth lens group includes at least three negativelenses, said fifth lens group includes at least five positive lenses andat least one negative lens, and said sixth lens group includes at leastone positive lens, wherein said second lens group comprises a front lensplaced as closest to the first object and having negative refractingpower with a concave surface to the second object, a rear lens placed asclosest to the second object and having negative refracting power with aconcave surface to the first object, and an intermediate lens groupplaced between said front and rear lenses in said second lens group,wherein said intermediate lens group has a first lens with positiverefracting power, a second lens with negative refracting power, a thirdlens with negative refracting power, and a fourth lens with negativerefracting power in the named order from the first object toward thesecond object, and wherein the following conditions are satisfied when afocal length of said first lens group is f₁, a focal length of saidsecond lens group is f₂, a focal length of said third lens group is f₃,a focal length of said fourth lens group is f₄, a focal length of saidfifth lens group is f₅, a focal length of said sixth lens group is f₆,an overall focal length of said second lens to said fourth lens in saidintermediate lens group in said second lens group is f_(n), and adistance from the first object to the second object is L: 0.1<f₁/f₃<170.1<f₂/f₄<14 0.01<f₅/L<0.9 0.02<f₆/L<1.6 0.01<f_(n)/f₂<2.0.
 14. Aprojection optical system according to claim 13, wherein the followingcondition is satisfied when an axial distance from the first object to afirst-object-side focal point of the whole of said projection opticalsystem is I and the distance from the first object to the second objectis L: 1.0<I/L.
 15. A projection optical system according to claim 14,therein wherein the following condition is satisfied when a focal lengthof said third lens with negative refracting power in said second lensgroup is f₂₃ and a focal length of said fourth lens with negativerefracting power in said intermediate lens group in said second lensgroup is f₂₄: 0.07<f₂₄/f₂₃<7.
 16. A projection optical system accordingto claim 15, wherein the following condition is satisfied when a focallength of said second lens with negative refracting power in saidintermediate lens group in said second lens group is f₂₂ and a focallength of said third lens with negative refracting power in saidintermediate lens group in said second lens group is f₂₃:0.01<f₂₂/f₂₃<10.
 17. A projection optical system according to claim 16,wherein the following condition is satisfied when a focal length of saidfirst lens with positive refracting power in said intermediate lensgroup in said second lens group is f₂₁ and the distance from the firstobject to the second object is L:  0.230<f₂₁/L<0.40.
 18. A method forfabricating at least semiconductor devices or liquid crystal displaydevices by using a projection optical system according to claim 16,comprising the steps of: illuminating a mask prepared as said firstobject with light of a predetermined wavelength, said mask being formedwith a predetermined pattern thereon; and projecting an image of thepattern on said mask onto a photosensitive substrate prepared as saidsecond object through said projection optical system, thereby performingan exposure process.
 19. A projection optical system according to claim13, wherein said intermediate lens group in said second lens group hasnegative refracting power.
 20. A projection optical system according toclaim 13, wherein the following condition is satisfied when the focallength of said second lens group is f₂ and the distance from the firstobject to the second object is L: −0.8<f₂/L<−0.050.
 21. A projectionoptical system according to claim 13, wherein the following condition issatisfied when a focal length of said front lens placed as closest tothe first object in said second lens group and having negativerefracting power with a concave surface to the second object is f_(2F)and a focal length of said rear lens placed as closest to the secondobject in said second lens group and having negative refracting powerwith a concave surface to the first object is f_(2R):0≦f_(2F)/f_(2R)<18.
 22. A projection optical system according to claim13, wherein the following condition is satisfied when a focal length ofsaid third lens with negative refracting power in said second lens groupis f₂₃ and a focal length of said fourth lens with negative refractingpower in said intermediate lens group in said second lens group is f₂₄:0.07<f₂₄/f₂₃<7.
 23. A projection optical system according to claim 13,wherein the following condition is satisfied when a focal length of saidsecond lens with negative refracting power in said intermediate lensgroup in said second lens group is f₂₂ and a focal length of said thirdlens with negative refracting power in said intermediate lens group insaid second lens group is f₂₃: 0.1<f₂₂/f₂₃<10.
 24. A projection opticalsystem according to claim 13, wherein the following condition issatisfied when an axial distance from a second-object-side lens surfaceof said fourth lens with negative refracting power in said intermediatelens group in said second lens group to a first-object-side lens surfaceof said rear lens in said second lens group is D and the distance fromthe first object to the second object is L: 0.05<D/L<0.4.
 25. Aprojection optical system according to claim 13, wherein said first lenswith positive refracting power in said intermediate lens group in saidsecond lens group has a lens shape with a convex surface to the secondobject, and wherein the following condition is satisfied when therefracting power of a second-object-side lens surface of said first lenswith positive refracting power in said intermediate lens group in saidsecond lens group is Φ₂₁ and the distance from the first object to thesecond object is L: 0.54<1/(Φ₂₁·L)<10.
 26. A projection optical systemaccording to claim 13, wherein the following condition is satisfied whena focal length of said first lens with positive refracting power in saidintermediate lens group in said second lens group is f₂₁ and thedistance from the first object to the second object is L:0.230<f₂₁/L<0.40.
 27. A projection optical system according to claim 13,wherein the following condition is satisfied when the focal length ofsaid fourth lens group is f₄ and the distance from said the first objectto the second object is L: −0.098<f₄/L<−0.005.
 28. A projection opticalsystem according to claim 13, wherein said fourth lens group comprises afront lens placed as closest to the first object and having negativerefracting power with a concave surface to the second object, a rearlens placed as closest to the second object and having negativerefracting power with a concave surface to the first object, and atleast one negative lens placed between said front lens in said fourthlens group and said rear lens in said fourth lens group, and wherein thefollowing condition is satisfied when a radius of curvature on the firstobject side in said rear lens places as closest to the second object insaid fourth lens group is r_(4F) and a radius of curvature on the secondobject side in said rear lens placed as closest to the second object insaid fourth lens group is r_(4R):−1.00≦(r_(4F)−r_(4R))/(r_(4F)+r_(4R))<0.
 29. A projection optical systemaccording to claim 13, wherein said fifth lens group comprises anegative meniscus lens, and a positive lens placed as adjacent to aconcave surface of said negative meniscus lens and having a convexsurface opposed to the concave surface of said negative meniscus lens,and wherein the following condition is satisfied when a radius ofcurvature of the concave surface of said negative meniscus lens in saidfifth lens group is r_(5n) and a radius of curvature of the convexsurface opposed to the concave surface of said negative meniscus lens insaid positive lens placed adjacent to the concave surface of saidnegative meniscus lens in said fifth lens group is r_(5p):0<(r_(5p)−r_(5n))/(r_(5p)+r_(5n))<1.
 30. A projection optical systemaccording to claim 29, wherein said negative meniscus lens and saidpositive lens adjacent to the concave surface of said negative meniscuslens are placed between positive lenses in said fifth lens group.
 31. Aprojection optical system according to claim 13, wherein said fifth lensgroup comprises a negative lens placed as closest to the second objectand having a concave surface opposed to the second object, and whereinthe following condition is satisfied when a radius of curvature on thefirst object side in said negative lens closest to the second object insaid fifth lens group is r_(5F) and a radius of curvature on the secondobject side in said negative lens closest to the second object in saidfifth lens group is r_(5R): 0.30<(r_(5F)−r_(5R))/(r_(5F)+r_(5R))<1.28.32. A projection optical system according to claim 13, wherein saidfifth lens group comprises a negative lens placed as closest to thesecond object and having a concave surface opposed to the second objectand said sixth lens group comprises a lens placed as closest to thefirst object and having a convex surface opposed to the first object,and wherein the following condition is satisfied when a radius ofcurvature on the second object side, of said negative lens placed asclosest to the second object in said fifth lens group is r_(5R) and aradius of curvature on the first object side, of said lens placed asclosest to the first object in said sixth lens group is r_(6F):−0.90<(r_(5R)−r_(6F))/(r_(5R)+r_(6F))<−0.001.
 33. A projection opticalsystem according to claim 13, wherein the following condition issatisfied when a lens group separation between said fifth lens group andsaid sixth lens group is d₅₆ and the distance from the first object tothe second object is L: d₅₆/L<0.017.
 34. A projection optical systemaccording to claim 13, wherein the following condition is satisfied whena radius of curvature of a lens surface closest to the first object insaid sixth lens group is r_(6F) and an axial distance from the lenssurface closest to the first object in said sixth lens group to thesecond object is d₆: 0.50<d₆/r_(6F)<1.50.
 35. A projection opticalsystem according to claim 13, wherein said sixth lens group comprisesthree or less lenses having at least one surface satisfying thefollowing condition: 1/|φL|<20, where Φ: refracting power of the lenssurface; L: object-image distance from the first object to the secondobject.
 36. A projection optical system according to claim 13, wherein amagnification of said projection optical system is 5:1.
 37. A method forfabricating at least semiconductor devices or liquid crystal displaydevices by using a projection optical system according to claim 13,comprising the steps of: illuminating a mask prepared as said firstobject with light of a predetermined wavelength, said mask being formedwith a predetermined pattern thereon; and projecting an image of thepattern on said mask onto a photosensitive substrate prepared as saidsecond object through said projection optical system, thereby performingan exposure process.
 38. A projection optical system according to claim13, wherein said fifth lens group comprises a negative lens placed asclosest to the second object and having a concave surface opposed to thesecond object.
 39. A projection optical system according to claim 38,wherein the following condition is satisfied when a lens groupseparation between said fifth lens group and said sixth lens group isd₅₆ and the distance from the first object to the second object is L:d₅₆/L<0.017.
 40. A projection optical system according to claim 38,wherein the following condition is satisfied when a radius of curvatureof a lens surface closest to the first object in said sixth lens groupis r_(6F) and an axial distance from the lens surface closest to thefirst object in said sixth lens group to the second object is d₆:0.50<d₆/r_(6F)<1.50.
 41. A projection optical system according to claim38, wherein said sixth lens group comprises three or less lenses havingat least one surface satisfying the following condition: 1/|ΦL|<20.where Φ: refracting power of the lens surface; L: object-image distancefrom the first object to the second object.
 42. An exposure apparatuscomprising: a stage allowing a photosensitive substrate to be held on amain surface thereof; an illumination optical system for emittingexposure light of a predetermined wavelength and transferring apredetermined pattern on a mask onto the substrate; and a projectingoptical system for projecting an image of the mask, on the substratesurface, said projecting optical system having: a first lens group withpositive refracting power, said first lens group being placed betweenthe mask and the main surface of said stage; a second lens group withnegative refracting power, said second lens group being placed betweensaid first lens group and the main surface of said stage; a third lensgroup with positive refracting power, said third lens groups beingplaced between said second lens group and the main surface of saidstage; a fourth lens group with negative refracting power, said fourthlens group being placed between said third lens group and the mainsurface of said stage; a fifth lens group with positive refractingpower, said fifth lens group being placed between said fourth lens groupand the main surface of said stage; and a sixth lens group, said sixthlens group being placed between said fifth lens group and the mainsurface of said stage, wherein said first lens group includes at leasttwo positive lenses, said third lens group includes at least threepositive lenses, said fourth lens group includes at least three negativelenses, said fifth lens group includes at least five positive lenses andat least one negative lens, and said sixth lens group includes at leastone positive lens, wherein said second lens group comprises a front lensplaced as closest to the first object and having a negative refractingpower with a concave surface to the second object, a rear lens asclosest to the second object and having negative refracting power with aconcave surface to the first object, and an intermediate lens groupplaced between said front and rear lenses in said second lens group, andwherein said intermediate lens group has a first lens with positiverefracting power, a second lens with negative refracting power, a thirdlens with negative refracting power, and a fourth lens with negativerefracting power in the named order from the first object toward thesecond object.
 43. An exposure apparatus according to claim 42, whereinthe following conditions are satisfied when a focal length of said firstlens group is f₁, a focal length of said second lens group is f₂, afocal length of said third lens group is f₃, a focal length of saidfourth lens group is f₄, a focal length of said fifth lens group is f₅,a focal length of said sixth lens group is f₆, an overall focal lengthof said second lens to said fourth lens in said intermediate lens groupin said second lens group is f_(n), and a distance from the first objectto the second object is L: 0.1<f₁/f₃<17 0.1<f₁/f₄<14 0.01<f₅/L<0.90.02<f₆/L<1.6 0.01<f_(n)/f₂<2.0.
 44. A projection optical system locatedbetween a first object and a second object, for projecting an image ofthe first object onto the second object, said projection optical systemhaving: a first lens group with positive refracting power, said firstlens group being placed between the first and second objects; a secondlens group with negative refracting power, said second lens group beingplaced between said first lens group and the second object; a third lensgroup with positive power, said third lens group being placed betweensaid second lens group and the second object; a fourth lens group withnegative refracting power, said fourth lens group being placed betweensaid third lens group and the second object; a fifth lens group withpositive refracting power, said fifth lens group being placed betweensaid fourth lens group and the second object; and a sixth lens groupwith positive refracting power, said six lens group being placed betweensaid fifth lens group and the second object, wherein said first lensgroup includes at least two positive lenses, said third lens groupincludes at least three positive lenses, said fourth lens group includesat least three negative lenses, said fifth lens group includes at leastfive positive lenses and at least one negative lens, and said sixth lensgroup includes at least one positive lens, and wherein said fifth lensgroup comprises a negative meniscus lens, and a positive lens placed asadjacent to a concave surface of said negative meniscus lens and havinga convex surface opposed to the concave surface of said negativemeniscus lens.
 45. A projection optical system according to claim 44,wherein said negative meniscus lens and said positive lens adjacent tothe concave surface of said negative meniscus lens are placed betweenpositive lenses in said fifth lens group.
 46. A projection opticalsystem according to claim 45, wherein the following condition issatisfied when an axial distance from the first object to afirst-object-side focal point of the whole of said projection opticalsystem is I and the distance from the first object to the second objectis L: 1.0<I/L.
 47. A projection optical system according to claim 46,wherein said fourth lens group comprises a front lens placed as closestto the first object and having negative refracting power with a concavesurface to the second object, a rear lens placed as closest to thesecond object and having negative refracting power with a concavesurface to the first object, and at least one negative lens placedbetween said front lens in said fourth lens group and said rear lens insaid fourth lens group.
 48. A projection optical system according toclaim 47, wherein said second lens group comprises a front lens placedas closest to the first object and having negative refracting power witha concave surface to the second object, a rear lens placed as closest tothe second object and having negative refracting power with a concavesurface to the second object and having negative refracting power with aconcave surface to the first object, and an intermediate lens groupplaced between said front and rear lenses in said second lens group,wherein said intermediate lens group has a first lens with positiverefracting power, a second lens with negative refracting power, a thirdlens with negative refracting power, and a fourth lens with negativerefracting power in the named order from the first object toward thesecond object, and wherein the following conditions are satisfied when afocal length of said first lens group is f₁, a focal length of saidsecond lens group is f₂, a focal length of said third lens group is f₃,a focal length of said fourth lens group is f₄, a focal length of saidfifth lens group is f₅, a focal length of said sixth lens group is f₆,an overall focal length of said second lens to said fourth lens in saidintermediate lens group in said second lens group is f_(n), and adistance from the first object to the second object is L: 0.1<f₁/f₃<170.1<f₂/f₄<14 0.01<f₅/L<0.9 0.02<f₆/L<1.6 0.01<f_(n)/f₂<2.0.
 49. Aprojection optical system according to claim 48, wherein the followingcondition is satisfied when a focal length of said third lens withnegative refracting power in said second lens group is f₂₃ and a focallength of said fourth lens with negative refracting power in saidintermediate lens group in said second lens group is f₂₄:0.07<f₂₄/f₂₃<7.
 50. A projection optical system according to claim 49,wherein the following condition is satisfied when a focal length of saidsecond lens with negative refracting power in said intermediate lensgroup in said second lens group is f₂₂ and a focal length of said thirdlens with negative refracting power in said intermediate lens group insaid second lens group is f₂₃: 0.01<f₂₂/f₂₃<10.
 51. A projection opticalsystem according to claim 49 48, wherein the following condition issatisfied when a focal length of said second lens with negativerefracting power in said intermediate lens group in said second lensgroup is f₂₂ and a focal length of said third lens with negativerefracting power in said intermediate lens group in said second lensgroup is f₂₃: 0.01<f₂₂/f₂₃<10.
 52. A projection optical system accordingto claim 50, wherein the following condition is satisfied when a focallength of said first lens with positive refracting power in saidintermediate lens group in second lens group is f₂₁ and the distancefrom the first object to the second object is L: 0.230<f₂₁/L<0.40.
 53. Aprojection optical system according to claim 50 48, wherein thefollowing condition is satisfied when a focal length of said first lenswith positive refracting power in said intermediate lens group in saidsecond lens group is f₂₁ and the distance from the first object to thesecond object is L: 0.230<f₂₁/L<0.40.
 54. A method for fabricating atleast semiconductor devices or liquid crystal display devices by using aprojection optical system according to claim 50, comprising the stepsof: illuminating a mask prepared as said first object with light of apredetermined wavelength, said mask being formed with a predeterminedpattern thereon; and projecting an image of the pattern on said maskonto a photosensitive substrate prepared as said second object throughsaid projection optical system, thereby performing an exposure process.55. A projection optical system according to claim 46, wherein saidsecond lens group comprises a front lens placed as closest to the firstobject and having negative refracting power with a concave surface tothe second object, a rear lens placed as closest to the second objectand having negative refracting power with a concave surface to the firstobject, and an intermediate lens group placed between said front andrear lenses in said second lens group, wherein said intermediate lensgroup has a first lens with positive refracting power, a second lenswith negative refracting power, a third lens with negative refractingpower, and a fourth lens with negative refracting power in the namedorder from the first object toward the second object, and wherein thefollowing conditions are satisfied when a focal length of said firstlens group is f₁, a focal length of said second lens group is f₂, afocal length of said third lens group is f₃, a focal length of saidfourth lens group is f₄, a focal length of said fifth lens group is f₅,a focal length of said sixth lens group is f₆, an overall focal lengthof said second lens to said fourth lens in said intermediate lens groupin said second lens group is f_(n), and a distance from the first objectto the second object is L: 0.1<f₁/f₃<17 0.1<f₂/f₄<14 0.01<f₅/L<0.90.02<f₆/L<1.6 0.01<f_(n)/f₂<2.0.
 56. A projection optical systemaccording to claim 55, wherein the following condition is satisfied whena focal length of said third lens with negative refracting power in saidsecond lens group is f₂₃ and a focal length of said fourth lens withnegative refracting power in said intermediate lens group in said secondlens group is f₂₄: 0.07<f₂₄/f₂₃<7.
 57. A projection optical systemaccording to claim 47, wherein said fifth lens group comprises anegative lens placed as closest to the second object and having aconcave surface opposed to the second object.
 58. A projection opticalsystem according to claim 57, wherein the following condition issatisfied when a radius of curvature of a lens surface closest to thefirst object in said sixth lens group is r_(6F) and an axial distancefrom the lens surface closest to the first object in said sixth lensgroup to the second object is d₆: 0.50<d₆/r_(6F)<1.50.
 59. A method forfabricating at least semiconductor devices or liquid crystal displaydevices by using a projection optical system according to claim 58,comprising the steps of: illuminating a mask prepared as said firstobject with light of a predetermined wavelength, said mask being formedwith a predetermined pattern thereon; and projecting an image of thepattern on said mask onto a photosensitive substrate prepared as saidsecond object through said projection optical system, thereby performingan exposure process.
 60. A projection optical system according to claim58, wherein said second lens group comprises a front lens placed asclosest to the first object and having negative refracting power with aconcave surface to the second object, a rear lens placed as closest tothe second object and having negative refracting power with a concavesurface to the first object, and an intermediate lens group placedbetween said front and rear lenses in said second lens group, whereinsaid intermediate lens group has a first lens with positive refractingpower, a second lens with negative refracting power, a third lens withnegative refracting power, and a fourth lens with negative refractingpower in the named order from the first object toward the second object,and wherein the following conditions are satisfied when a focal lengthof said first lens group is f₁, a focal length of said second lens groupis f₂, a focal length of said third lens group is f₃, a focal length ofsaid fourth lens group is f₄, a focal length of said fifth lens group isf₅, a focal length of said sixth lens group is f₆, an overall focallength of said second lens to said fourth lens in said intermediate lensgroup in said second lens group is f_(n), and a distance from the firstobject to the second object is L: 0.1<f₁/f₃<17 0.1<f₂/f₄<140.01<f₅/L<0.9 0.02<f₆/L<1.6 0.01<f_(n)/f₂<2.0.
 61. A projection opticalsystem according to claim 60, wherein the following condition issatisfied when a focal length of said third lens with negativerefracting power in said second lens group is f₂₃ and a focal length ofsaid fourth lens with negative refracting power in said intermediatelens group in said second lens group is f₂₄: 0.07<f₂₄/f₂₃<7.
 62. Aprojection optical system according to claim 61, wherein the followingcondition is satisfied when a focal length of said second lens withnegative refracting power in said intermediate lens group in said secondlens group is f₂₂ and a focal length of said third lens with negativerefracting power in said intermediate lens group in said second lensgroup is f₂₃: 0.01<f₂₂/f₂₃<10.
 63. A projection optical system accordingto claim 62, wherein the following condition is satisfied when a focallength of said first lens with positive refracting power in saidintermediate lens group in said second lens group is f₂₁ and thedistance from the first object to the second object is L:0.230<f₂₁/L<0.40.
 64. A method for fabricating at least semiconductordevices or liquid crystal display devices by using a projection opticalsystem according to claim 44, comprising the steps of: illuminating amask prepared as said first object with light of a predeterminedwavelength, said mask being formed with a predetermined pattern thereon;and projecting an image of the pattern on said mask onto aphotosensitive substrate prepared as said second object through saidprojection optical system, thereby performing an exposure process.
 65. Aprojection optical system located between a first object and a secondobject, for projecting an image of the first object onto the secondobject, said projection optical system having: a first lens group withpositive refracting power, said first lens group being placed betweenthe first and second objects; a second lens group with negativerefracting power, said second lens group being placed between said firstlens group and the second object; a third lens group with positiverefracting power, said third lens group being placed between said secondlens group and the second object; a fourth lens group with negativerefracting power, said fourth lens group being placed between said thirdlens group and the second object; a fifth lens group with positiverefracting power, said fifth lens group being placed between said fourthlens group and the second object; and a sixth lens group with positiverefracting power, said sixth lens group being placed between said fifthlens group and the second object, wherein said first lens group includesat least two positive lenses, said third lens group includes at leastthree positive lenses, said fourth lens group includes at least threenegative lenses, said fifth lens group includes at least five positivelenses and at least one negative lens, and said sixth lens groupincludes at least one positive lens, wherein said fourth lens groupcomprises a front lens placed as closest to the first object and havingnegative refracting power with a concave surface to the second object, arear lens placed as closest to the second object and having negativerefracting power with a concave surface to the first object, and atleast one negative lens placed between said front lens in said fourthlens group and said rear lens in said fourth lens group, and wherein thefollowing condition is satisfied when a radius of curvature on the firstobject side in said rear lens placed as closest to the second object insaid fourth lens group is r_(4F) and a radius of curvature on the secondobject side in said rear lens placed as closest to the second object insaid fourth lens group is r_(4R):−1.00≦(r_(4F)−r_(4R))/(r_(4F)+r_(4R))<0.
 66. A method for fabricating atleast semiconductor devices or liquid crystal display devices by using aprojection optical system according to claim 65, comprising the stepsof: illuminating a mask prepared as said first object with light of apredetermined wavelength, said mask being formed with a predeterminedpattern thereon; and projecting an image of the pattern on said maskonto a photosensitive substrate prepared as said second object throughsaid projection optical system, thereby performing an exposure process.67. A projection optical system according to claim 65, wherein saidfifth lens group comprises a negative meniscus lens, and a positive lensplaces as adjacent to a concave surface of said negative meniscus lensand having a convex surface opposed to the concave surface of saidnegative meniscus lens, and wherein the following condition is satisfiedwhen a radius of curvature of the concave surface of said negativemeniscus lens in said fifth lens group is r_(5n) and a radius ofcurvature of the convex surface opposed to the concave surface of saidnegative meniscus lens in said positive lens placed adjacent to theconcave surface of said negative meniscus lens in said fifth lens groupis r_(5p): 0<(r_(5p)−r_(5n))/(r_(5p)+r_(5n))<1.
 68. A projection opticalsystem according to claim 67, wherein said negative meniscus lens andsaid positive lens adjacent to the concave surface of said negativemeniscus lens are placed between positive lenses in said fifth lensgroup.
 69. A method for fabricating at least semiconductor devices orliquid crystal display devices by using a projection optical systemaccording to claim 68, comprising the steps of: illuminating a maskprepared as said first object with light of a predetermined wavelength,said mask being formed with a predetermined pattern thereon; andprojecting an image of the pattern on said mask onto a photosensitivesubstrate prepared as said second object through said projection opticalsystem, thereby performing an exposure process.
 70. An exposureapparatus comprising: a stage allowing a photosensitive substrate to beheld on a main surface thereof; an illumination optical system foremitting exposure light of a predetermined wavelength and transferring apredetermined pattern on a mask onto said substrate; and a projectingoptical system for projecting an image of the pattern on said mask ontosaid substrate, said projecting optical system being provided betweensaid mask and said substrate and having: a first lens group withpositive refracting power, said first lens group being placed betweensaid mask and said substrate; a second lens group with negativerefracting power, said second lens group being placed between said firstlens group and said substrate; a third lens group with positiverefracting power, said third lens group being placed between said secondlens group and said substrate; a fourth lens group with negativerefracting power, said fourth lens group being placed between said thirdlens group and said substrate; a fifth lens group with positiverefracting power, said fifth lens group being placed between said fourthlens group and said substrate; and a sixth lens group with positiverefracting power, said sixth lens group being placed between said fifthlens group and said substrate, wherein said first lens group includes atleast two positive lenses, said third lens group includes at least threepositive lenses, said fourth lens group includes at least three negativelenses, said fifth lens group includes at least five positive lenses andat least one negative lens, and said sixth lens group includes at leastone positive lens, and wherein said fifth lens group comprises anegative meniscus lens, and a positive lens placed as adjacent to aconcave surface of said negative meniscus lens and having a convexsurface opposed to the concave surface of said negative meniscus lens.71. An exposure apparatus according to claim 70, wherein said negativemeniscus lens and said positive lens adjacent to the concave surface ofsaid negative meniscus lens are placed between positive lenses in saidfifth lens group.
 72. A projection optical system located between afirst object and a second object, for projecting an image of the firstobject onto the second object, said projection optical system having: afirst lens group with positive refracting power, and first lens groupbeing placed between the first and second objects; a second lens groupwith negative refracting power, said second lens group being placedbetween said first lens group and the second object; a third lens groupwith positive refracting power, said third lens group being placedbetween said second lens group and the second object; a fourth lensgroup with negative refracting power, said fourth lens group beingplaced between said third lens group and the second object; a fifth lensgroup with positive refracting power, said fifth lens group being placedbetween said fourth lens group and the second object; and a sixth lensgroup with positive refracting power, said six lens group being placedbetween said fifth lens group and the second object, wherein said firstlens group includes at least two positive lenses, said third lens groupincludes at least three positive lenses, said fourth lens group includesat least three negative lenses, said fifth lens group includes at leastfive positive lenses and at least one negative lens, and said sixth lensgroup includes at least one positive lens, wherein said second lensgroup comprises a front lens placed as closest to the first object andhaving negative refracting power with a concave surface to the secondobject, a rear lens placed as closest to the second object and havingnegative refracting power with a concave surface to the first object,and an intermediate lens group placed between said front and rear lensesin said second lens group, and wherein said intermediate lens groupincludes a positive lens and a negative lens.
 73. A projection opticalsystem according to claim 72, wherein the following condition issatisfied when an axial distance from the first object to afirst-object-side focal point of the whole of said projection opticalsystem is I and the distance from the first object to the second objectis L: 1.0<I/L.
 74. A projection optical system according to claim 73,wherein said fourth lens group comprises a front lens placed as closestto the first object and having negative refracting power with a concavesurface to the second object, a rear lens placed as closest to thesecond object and having negative refracting power with a concavesurface to the first object, and at least one negative lens placedbetween said front lens in said fourth lens group and said rear lens insaid fourth lens group.
 75. A projection optical system according toclaim 73, wherein said fifth lens group comprises a negative meniscuslens, and a positive lens placed as adjacent to a concave surface ofsaid negative meniscus lens and having a convex surface opposed to theconcave surface of said negative meniscus lens.
 76. A projection opticalsystem according to claim 75, wherein said negative meniscus lens andsaid positive lens adjacent to the concave surface of said negativemeniscus lens are placed between positive lenses in said fifth lensgroup.
 77. A projection optical system according to claim 76, whereinsaid fifth lens group comprises a negative lens placed as closest to thesecond object and having a concave surface opposed to the second object.78. A projection optical system according to claim 77, wherein saidsixth lens group comprises a lens placed as closest to the first objectand having a convex surface opposed to the first object.
 79. Aprojection optical system according to claim 74, wherein said fifth lensgroup comprises a negative meniscus lens, and a positive lens placed asadjacent to a concave surface of said negative meniscus lens and havinga convex surface opposed to the concave surface of said negativemeniscus lens.
 80. A projection optical system according to claim 79,wherein said negative meniscus lens and said positive lens adjacent tothe concave surface of said negative meniscus lens are placed betweenpositive lenses in said fifth lens group.
 81. A projection opticalsystem according to claim 80, wherein said fifth lens group comprises anegative lens placed as closest to the second object and having aconcave surface opposed to the second object.
 82. A method forfabricating at least semiconductor devices or liquid crystal displaydevices by using a projection optical system according to claim 80,comprising the steps of: illuminating a mask prepared as said firstobject with light of a predetermined wavelength, said mask being formedwith a predetermined pattern thereon; and projecting an image of thepattern on said mask onto a photosensitive substrate prepared as saidsecond object through said projection optical system, thereby performingan exposure process.
 83. A projection optical system according to claim81, wherein said sixth lens group comprises a lens placed as closest tothe first object and having a convex surface opposed to the firstobject.
 84. A method for fabricating at least semiconductor devices orliquid crystal display devices by using a projection optical systemaccording to claim 72, comprising the steps of: illuminating a maskprepared as said first object with light of a predetermined wavelength,said mask being formed with a predetermined pattern thereon; andprojecting an image of the pattern on said mask onto a photosensitivesubstrate prepared as said second object through said projection opticalsystem, thereby performing an exposure process.
 85. A method ofmanufacturing a projection optical system to project an image of a firstobject onto a second object, comprising the steps of: preparing a firstlens group with positive power which includes at least two positivelenses; preparing a second lens group with negative power; preparing athird lens group with positive power which includes at least threepositive lenses; preparing a fourth lens group with negative power whichincludes at least three negative lenses; preparing a fifth lens groupwith positive power which includes at least five positive first lensesand at least one negative first lens, said fifth lens group furtherincluding a negative additional lens and a positive additional lensplaced adjacent to said negative additional lens; preparing a sixth lensgroup with positive power which includes at least one positive lens;disposing said first lens group in an optical path between an objectsurface in which the first object is disposed and said second lensgroup; disposing said second lens group in an optical path between saidfirst lens group and said third lens group; disposing said third lensgroup in an optical path between said second lens group and said fourthlens group; disposing said fourth lens group in an optical path betweensaid third lens group and said fifth lens group; disposing said fifthlens group in an optical path between said fourth lens group and saidsixth lens group; and disposing said sixth lens group in an optical pathbetween said fifth lens group and an image plane in which the secondobject is disposed.
 86. A method according to claim 85, wherein saidstep of disposing said fifth lens group comprises the step of placingsaid negative additional lens and said positive additional lens betweentwo positive first lenses of said at least five positive first lenses.87. A method according to claim 86, wherein said negative additionallens in said fifth lens group has a concave surface, and said positiveadditional lens in said fifth lens group has a convex surface facing theconcave surface of said negative additional lens.
 88. A method accordingto claim 85, wherein said negative additional lens in said fifth lensgroup has a concave surface, and said positive additional lens in saidfifth lens group has a convex surface facing the concave surface of saidnegative additional lens.
 89. A method according to claim 85, whereinsaid negative additional lens in said fifth lens group includes anegative meniscus lens having a concave surface, and said positiveadditional lens in said fifth lens group has a convex surface facing theconcave surface of said negative meniscus lens.
 90. A method accordingto claim 86, wherein said negative additional lens in said fifth lensgroup includes a negative meniscus lens.
 91. A method according to claim85, further comprising the step of disposing an aperture stop betweensaid negative additional lens of said fifth lens group and at least oneof the three negative lenses of the fourth lens group.
 92. A methodaccording to claim 86, further comprising the step of disposing anaperture stop between said negative additional lens of said fifth lensgroup and at least one of the three negative lenses of the fourth lensgroup.
 93. A method according to claim 87, further comprising the stepof disposing an aperture stop between said negative additional lens ofsaid fifth lens group and at least one of the three negative lenses ofthe fourth lens group.
 94. A method according to claim 88, furthercomprising the step of disposing an aperture stop between said negativeadditional lens of said fifth lens group and at least one of the threenegative lenses of the fourth lens group.
 95. A method according toclaim 90, further comprising the step of disposing an aperture stopbetween said negative additional lens of said fifth lens group and atleast one of the three negative lenses of the fourth lens group.
 96. Amethod for fabricating at least a semiconductor device or a liquidcrystal device by using a projection optical system manufactured by amethod according to claim 85, comprising the steps of: disposing areticle as the first object in the object surface; disposing a substrateas the second object in the image plane; illuminating the reticle withlight having a predetermined wavelength; and projecting an image of apattern formed on the reticle onto the substrate through said projectionoptical system.
 97. A method for fabricating at least a semiconductordevice or a liquid crystal device by using a projection optical systemmanufactured by a method according to claim 86, comprising the steps of:disposing a reticle as the first object in the object surface; disposinga substrate as the second object in the image plane; illuminating thereticle with light having a predetermined wavelength; and projecting animage of a pattern formed on the reticle onto the substrate through saidprojection optical system.
 98. A method for fabricating at least asemiconductor device or a liquid crystal device by using a projectionoptical system manufactured by a method according to claim 87,comprising the steps of: disposing a reticle as the first object in theobject surface; disposing a substrate as the second object in the imageplane; illuminating the reticle with light having a predeterminedwavelength; and projecting an image of a pattern formed on the reticleonto the substrate through said projection optical system.
 99. A methodfor fabricating at least a semiconductor device or a liquid crystaldevice by using a projection optical system manufactured by a methodaccording to claim 88, comprising the steps of: disposing a reticle asthe first object in the object surface; disposing a substrate as thesecond object in the image plane; illuminating the reticle with lighthaving a predetermined wavelength; and projecting an image of a patternformed on the reticle onto the substrate through said projection opticalsystem.
 100. A method for fabricating at least a semiconductor device ora liquid crystal device by using a projection optical systemmanufactured by a method according to claim 89, comprising the steps of:disposing a reticle as the first object in the object surface; disposinga substrate as the second object in the image plane; illuminating thereticle with light having a predetermined wavelength; and projecting animage of a pattern formed on the reticle onto the substrate through saidprojection optical system.
 101. A method for fabricating at least asemiconductor device or a liquid crystal device by using a projectionoptical system manufactured by a method according to claim 90,comprising the steps of: disposing a reticle as the first object in theobject surface; disposing a substrate as the second object in the imageplane; illuminating the reticle with light having a predeterminedwavelength; and projecting an image of a pattern formed on the reticleonto the substrate through said projection optical system.
 102. A methodfor fabricating at least a semiconductor device or a liquid crystaldevice by using a projection optical system manufactured by a methodaccording to claim 91, comprising the steps of: disposing a reticle asthe first object in the object surface; disposing a substrate as thesecond object in the image plane; illuminating the reticle with lighthaving a predetermined wavelength; and projecting an image of a patternformed on the reticle onto the substrate through said projection opticalsystem.
 103. A method for fabricating at least a semiconductor device ora liquid crystal device by using a projection optical systemmanufactured by a method according to claim 92, comprising the steps of:disposing a reticle as the first object in the object surface; disposinga substrate as the second object in the image plane; illuminating thereticle with light having a predetermined wavelength; and projecting animage of a pattern formed on the reticle onto the substrate through saidprojection optical system.
 104. A method for fabricating at least asemiconductor device or a liquid crystal device by using a projectionoptical system manufactured by a method according to claim 93,comprising the steps of: disposing a reticle as the first object in theobject surface; disposing a substrate as the second object in the imageplane; illuminating the reticle with light having a predeterminedwavelength; and projecting an image of a pattern formed on the reticleonto the substrate through said projection optical system.
 105. A methodfor exposing a pattern formed on a reticle onto a substrate by using aprojection optical system manufactured by a method according to claim85, comprising the steps of: disposing the reticle as the first objectin the object surface; disposing the substrate as the second object inthe image plane; illuminating the reticle with light having apredetermined wavelength; and projecting an image of a pattern formed onthe reticle onto the substrate through said projection optical system.106. A method for exposing a pattern formed on a reticle onto asubstrate by using a projection optical system manufactured by a methodaccording to claim 86, comprising the steps of: disposing the reticle asthe first object in the object surface; disposing the substrate as thesecond object in the image plane; illuminating the reticle with lighthaving a predetermined wavelength; and projecting an image of a patternformed on the reticle onto the substrate through said projection opticalsystem.
 107. A method of manufacturing an exposure apparatus to exposean image of a first object onto a second object, comprising the stepsof: providing an illumination optical system to illuminate the firstobject; and providing a projection optical system to project the imageof the first object onto the second object; wherein said projectionoptical system comprises: a first lens group with positive power, saidfirst lens group including at least two positive lenses; a second lensgroup with negative power; a third lens group with positive power, saidthird lens group including at least three positive lenses; a fourth lensgroup with negative power, said fourth lens group including at leastthree negative lenses; a fifth lens group with positive power, saidfifth lens group including at least five positive first lenses and atleast one negative first lens, said fifth lens group further including anegative additional lens and a positive additional lens placed adjacentto said negative additional lens; and a sixth lens group with positivepower, said sixth lens group including at least one positive lens;wherein said first lens group is disposed in an optical path between anobject surface in which the first object is disposed and said secondlens group; said second lens group is disposed in an optical pathbetween said first lens group and said third lens group; said third lensgroup is disposed in an optical path between said second lens group andsaid fourth lens group; said fourth lens group is disposed in an opticalpath between said third lens group and said fifth lens group; said fifthlens group is disposed in an optical path between said fourth lens groupand said sixth lens group; and said sixth lens group is disposed in anoptical path between said fifth lens group and an image plane in whichthe second object is disposed.
 108. A method according to claim 107,wherein said negative additional lens and said positive additional lensare placed between two positive first lenses of said at least fivepositive first lenses.
 109. A method according to claim 108, whereinsaid negative additional lens placed in said fifth lens group has aconcave surface, and said positive additional lens in said fifth lensgroup has a convex surface facing the concave surface of said negativeadditional lens.
 110. A method according to claim 107, wherein saidnegative additional lens placed in said fifth lens group has a concavesurface, and said positive additional lens in said fifth lens group hasa convex surface facing the concave surface of said negative additionallens.
 111. A method according to claim 107, wherein said negativeadditional lens in said fifth lens group includes a negative meniscuslens having a concave surface, and said positive additional lens in saidfifth lens group has a convex surface facing the concave surface of saidnegative meniscus lens.
 112. A method according to claim 107, whereinsaid negative additional lens in said fifth lens group includes anegative meniscus lens.
 113. A method according to claim 107, whereinsaid projection optical system further comprises an aperture stopdisposed between said negative additional lens of said fifth lens groupand at least one of the three negative lenses of the fourth lens group.114. A method according to claim 108, wherein said projection opticalsystem further comprises an aperture stop disposed between said negativeadditional lens of said fifth lens group and at least one of the threenegative lenses of the fourth lens group.
 115. A method according toclaim 109, wherein said projection optical system further comprises anaperture stop disposed between said negative additional lens of saidfifth lens group and at least one of the three negative lenses of thefourth lens group.
 116. A method according to claim 112, wherein saidprojection optical system further comprises an aperture stop disposedbetween said negative additional lens of said fifth lens group and atleast one of the three negative lenses of the fourth lens group.
 117. Amethod for fabricating at least a semiconductor device or a liquidcrystal device by using an exposure apparatus manufactured by a methodaccording to claim 107, comprising the steps of: disposing a reticle asthe first object in the object surface; disposing a substrate as thesecond object in the image plane; illuminating the reticle with lighthaving a predetermined wavelength by using said illumination opticalsystem of said exposure apparatus; and projecting an image of a patternformed on the reticle onto the substrate through said projection opticalsystem of said exposure apparatus.
 118. A method for fabricating atleast a semiconductor device or a liquid crystal device by using anexposure apparatus manufactured by a method according to claim 108,comprising the steps of: disposing a reticle as the first object in theobject surface; disposing a substrate as the second object in the imageplane; illuminating the reticle with light having a predeterminedwavelength by using said illumination optical system of said exposureapparatus; and projecting an image of a pattern formed on the reticleonto the substrate through said projection optical system of saidexposure apparatus.
 119. A method for fabricating at least asemiconductor device or a liquid crystal device by using an exposureapparatus manufactured by a method according to claim 109, comprisingthe steps of: disposing a reticle as the first object in the objectsurface; disposing a substrate as the second object in the image plane;illuminating the reticle with light having a predetermined wavelength byusing said illumination optical system of said exposure apparatus; andprojecting an image of a pattern formed on the reticle onto thesubstrate through said projection optical system of said exposureapparatus.
 120. A method for fabricating at least a semiconductor deviceor a liquid crystal device by using an exposure apparatus manufacturedby a method according to claim 112, comprising the steps of: disposing areticle as the first object in the object surface; disposing a substrateas the second object in the image plane; illuminating the reticle withlight having a predetermined wavelength by using said illuminationoptical system of said exposure apparatus; and projecting an image of apattern formed on the reticle onto the substrate through said projectionoptical system of said exposure apparatus.
 121. A method for fabricatingat least a semiconductor device or a liquid crystal device by using anexposure apparatus manufactured by a method according to claim 113,comprising the steps of: disposing a reticle as the first object in theobject surface; disposing a substrate as the second object in the imageplane; illuminating the reticle with light having a predeterminedwavelength by using said illumination optical system of said exposureapparatus; and projecting an image of a pattern formed on the reticleonto the substrate through said projection optical system of saidexposure apparatus.
 122. A method for fabricating at least asemiconductor device or a liquid crystal device by using an exposureapparatus manufactured by a method according to claim 114, comprisingthe steps of: disposing a reticle as the first object in the objectsurface; disposing a substrate as the second object in the image plane;illuminating the reticle with light having a predetermined wavelength byusing said illumination optical system of said exposure apparatus; andprojecting an image of a pattern formed on the reticle onto thesubstrate through said projection optical system of said exposureapparatus.
 123. A method for exposing a pattern formed on a reticle ontoa substrate by using an exposure apparatus manufactured by a methodaccording to claim 107, comprising the steps of: disposing the reticleas the first object in the object surface; disposing the substrate asthe second object in the image plane; illuminating the reticle withlight having a predetermined wavelength by using said illuminationoptical system of said exposure apparatus; and projecting an image of apattern formed on the reticle onto the substrate through said projectionoptical system of said exposure apparatus.
 124. A method for exposing apattern formed on a reticle onto a substrate by using an exposureapparatus manufactured by a method according to claim 108, comprisingthe steps of: disposing the reticle as the first object in the objectsurface; disposing the substrate as the second object in the imageplane; illuminating the reticle with light having a predeterminedwavelength by using said illumination optical system of said exposureapparatus; and projecting an image of a pattern formed on the reticleonto the substrate through said projection optical system of saidexposure apparatus.
 125. A method of manufacturing an exposure apparatusto expose an image of a first object onto a second object, comprisingthe steps of: providing an illumination optical system to illuminate thefirst object; and providing a projection optical system to project theimage of the first object onto the second object; wherein said step ofproviding said projection optical system comprises the steps of:preparing a first lens group with positive power which includes at leasttwo positive lenses; preparing a second lens group with negative power;preparing a third lens group with positive power which includes at leastthree positive lenses; preparing a fourth lens group with negative powerwhich includes at least three negative lenses; preparing a fifth lensgroup with positive power which includes at least five positive firstlenses and at least one negative first lens, said fifth lens groupfurther including a negative additional lens and a positive additionallens placed adjacent to said negative additional lens; preparing a lenssixth group with positive power which includes at least one positivelens; disposing said first lens group in an optical path between anobject surface in which the first object is disposed and said secondlens group; disposing said second lens group in an optical path betweensaid first lens group and said third lens group; disposing said thirdlens group in an optical path between said second lens group and saidfourth lens group; disposing said fourth lens group in an optical pathbetween said third lens group and said fifth lens group; disposing saidfifth lens group in an optical path between said fourth lens group andsaid sixth lens group; and disposing said sixth lens group in an opticalpath between said fifth lens group and an image plane in which thesecond object is disposed.
 126. A method according to claim 125, whereinsaid step of disposing said fifth lens group comprises the step ofplacing said negative additional lens and said positive additional lensbetween two positive first lenses of said at least five positive firstlenses.
 127. A method according to claim 126, wherein said negativeadditional lens in said fifth lens group has a concave surface, and saidpositive additional lens in said fifth lens group has a convex surfacefacing the concave surface of said negative additional lens.
 128. Amethod according to claim 125, wherein said negative additional lens insaid fifth lens group has a concave surface, and said positiveadditional lens in said fifth lens group has a convex surface facing theconcave surface of said negative additional lens.
 129. A methodaccording to claim 125, wherein said negative additional lens in saidfifth lens group includes a negative meniscus lens having a concavesurface, and said positive additional lens in said fifth lens group hasa convex surface facing the concave surface of said negative meniscuslens.
 130. A method according to claim 125, wherein said negativeadditional lens in said fifth lens group includes a negative meniscuslens.
 131. A method according to claim 125, further comprising the stepof disposing an aperture stop between said negative additional lens ofsaid fifth lens group and at least one of the three negative lenses ofthe fourth lens group.
 132. A method according to claim 126, furthercomprising the step of disposing an aperture stop between said negativeadditional lens of said fifth lens group and at least one of the threenegative lenses of the fourth lens group.
 133. A method according toclaim 127, further comprising the step of disposing an aperture stopbetween said negative additional lens of said fifth lens group and atleast one of the three negative lenses of the fourth lens group.
 134. Amethod for fabricating at least a semiconductor device or a liquidcrystal device by using an exposure apparatus manufactured by a methodaccording to claim 125, comprising the steps of: disposing a reticle asthe first object in the object surface; disposing a substrate as thesecond object in the image plane; illuminating the reticle with lighthaving a predetermined wavelength by using said illumination opticalsystem of said exposure apparatus; and projecting an image of a patternformed on the reticle onto the substrate through said projection opticalsystem of said exposure apparatus.
 135. A method for fabricating atleast a semiconductor device or a liquid crystal device by using anexposure apparatus manufactured by a method according to claim 126,comprising the steps of: disposing a reticle as the first object in theobject surface; disposing a substrate as the second object in the imageplane; illuminating the reticle with light having a predeterminedwavelength by using said illumination optical system of said exposureapparatus; and projecting an image of a pattern formed on the reticleonto the substrate through said projection optical system of saidexposure apparatus.
 136. A method for fabricating at least asemiconductor device or a liquid crystal device by using an exposureapparatus manufactured by a method according to claim 127, comprisingthe steps of: disposing a reticle as the first object in the objectsurface; disposing a substrate as the second object in the image plane;illuminating the reticle with light having a predetermined wavelength byusing said illumination optical system of said exposure apparatus; andprojecting an image of a pattern formed on the reticle onto thesubstrate through said projection optical system of said exposureapparatus.
 137. A method for fabricating at least a semiconductor deviceor a liquid crystal device by using an exposure apparatus manufacturedby a method according to claim 128, comprising the steps of: disposing areticle as the first object in the object surface; disposing a substrateas the second object in the image plane; illuminating the reticle withlight having a predetermined wavelength by using said illuminationoptical system of said exposure apparatus; and projecting an image of apattern formed on the reticle onto the substrate through said projectionoptical system of said exposure apparatus.
 138. A method for fabricatingat least a semiconductor device or a liquid crystal device by using anexposure apparatus manufactured by a method according to claim 131,comprising the steps of: disposing a reticle as the first object in theobject surface; disposing a substrate as the second object in the imageplane; illuminating the reticle with light having a predeterminedwavelength by using said illumination optical system of said exposureapparatus; and projecting an image of a pattern formed on the reticleonto the substrate through said projection optical system of saidexposure apparatus.
 139. A method for fabricating at least asemiconductor device or a liquid crystal device by using an exposureapparatus manufactured by a method according to claim 132, comprisingthe steps of: disposing a reticle as the first object in the objectsurface; disposing a substrate as the second object in the image plane;illuminating the reticle with light having a predetermined wavelength byusing said illumination optical system of said exposure apparatus; andprojecting an image of a pattern formed on the reticle onto thesubstrate through said projection optical system of said exposureapparatus.
 140. A method for fabricating at least a semiconductor deviceor a liquid crystal device by using an exposure apparatus manufacturedby a method according to claim 133, comprising the steps of: disposing areticle as the first object in the object surface; disposing a substrateas the second object in the image plane; illuminating the reticle withlight having a predetermined wavelength by using said illuminationoptical system of said exposure apparatus; and projecting an image of apattern formed on the reticle onto the substrate through said projectionoptical system of said exposure apparatus.
 141. A method for exposing apattern formed on a reticle onto a substrate by using an exposureapparatus manufactured by a method according to claim 125, comprisingthe steps of: disposing the reticle as the first object in the objectsurface; disposing the substrate as the second object in the imageplane; illuminating the reticle with light having a predeterminedwavelength by using said illumination optical system of said exposureapparatus; and projecting an image of a pattern formed on the reticleonto the substrate through said projection optical system of saidexposure apparatus.
 142. A method for exposing a pattern formed on areticle onto a substrate by using an exposure apparatus manufactured bya method according to claim 126, comprising the steps of: disposing thereticle as the first object in the object surface; disposing thesubstrate as the second object in the image plane; illuminating thereticle with light having a predetermined wavelength by using saidillumination optical system of said exposure apparatus; and projectingan image of a pattern formed on the reticle onto the substrate throughsaid projection optical system of said exposure apparatus.
 143. A methodfor exposing a pattern formed on a reticle onto a substrate by using anexposure apparatus manufactured by a method according to claim 127,comprising the steps of: disposing the reticle as the first object inthe object surface; disposing the substrate as the second object in theimage plane; illuminating the reticle with light having a predeterminedwavelength by using said illumination optical system of said exposureapparatus; and projecting an image of a pattern formed on the reticleonto the substrate through said projection optical system of saidexposure apparatus.
 144. A method for fabricating at least asemiconductor device or a liquid crystal device, comprising the stepsof: providing a reticle having a predetermined pattern; providing asubstrate; illuminating the reticle with light having a predeterminedwavelength; and projecting an image of the pattern formed on the reticleonto the substrate by using a projection optical system; wherein saidprojection optical system comprises: a first lens group with positivepower, said first lens group including at least two positive lenses; asecond lens group with negative power; a third lens group with positivepower, said third lens group including at least three positive lenses; afourth lens group with negative power, said fourth lens group includingat least three negative lenses; a fifth lens group with positive power,said fifth lens group including at least five positive first lenses andat least one negative first lens, said fifth lens group furtherincluding a negative additional lens and a positive additional lensplaced adjacent to said negative additional lens; and a sixth lens groupwith positive power, said sixth lens group including at least onepositive lens; wherein said first lens group is disposed in an opticalpath between an object surface in which the reticle is disposed and saidsecond lens group; said second group is disposed in an optical pathbetween said first lens group and said third lens group; said third lensgroup is disposed in an optical path between said second lens group andsaid fourth lens group; said fourth lens group is disposed in an opticalpath between said third lens group and said fifth lens group; said fifthlens group is disposed in an optical path between said fourth lens groupand said sixth lens group; and said sixth lens group is disposed in anoptical path between said fifth lens group and an image plane at whichthe substrate is disposed.
 145. A method according to claim 144, whereinsaid negative additional lens and said positive additional lens areplaced between two positive first lenses of said at least five positivefirst lenses.
 146. A method according to claim 145, wherein saidnegative additional lens in said fifth lens group has a concave surface,and said positive additional lens in said fifth lens group has a convexsurface facing the concave surface of said negative additional lens.147. A method according to claim 145, wherein said negative additionallens in said fifth lens group includes a negative meniscus lens.
 148. Amethod according to claim 144, wherein said projection optical systemfurther comprises an aperture stop disposed between said negativeadditional lens of said fifth lens group and at least one of the threenegative lenses of the fourth lens group.
 149. A method according toclaim 145, wherein said projection optical system further comprises anaperture stop disposed between said negative additional lens of saidfifth lens group and at least one of the three negative lenses of thefourth lens group.
 150. A method according to claim 146, wherein saidprojection optical system further comprises an aperture stop disposedbetween said negative additional lens of said fifth lens group and atleast one of the three negative lenses of the fourth lens group.
 151. Amethod according to claim 147, wherein said projection optical systemfurther comprises an aperture stop disposed between said negativeadditional lens of said fifth lens group and at least one of the threenegative lenses of the fourth lens group.
 152. A method for exposing apattern formed on a reticle onto a substrate, comprising the steps of:providing the reticle having a predetermined pattern; providing thesubstrate in an image plane; illuminating the reticle with light havinga predetermined wavelength; and projecting an image of the patternformed on the reticle onto the substrate by using a projection opticalsystem; wherein said projection optical system comprises: a first lensgroup with positive power, said first lens group including at least twopositive lenses; a lens second group with negative power; a third lensgroup with positive power, said third lens group including at leastthree positive lenses; a fourth lens group with negative power, saidfourth lens group including at least three negative lenses; a fifth lensgroup with positive power, said fifth lens group including at least fivepositive first lenses and at least one negative first lens, said fifthlens group further including a negative additional lens and a positiveadditional lens placed adjacent to said negative additional lens; and asixth lens group with positive power, said sixth lens group including atleast one positive lens; wherein said first lens group is disposed in anoptical path between an object surface in which the reticle is disposedand said second lens group; said second lens group is disposed in anoptical path between said first lens group and said third lens group;said third lens group is disposed in an optical path between said secondlens group and said fourth lens group; said fourth lens group isdisposed in an optical path between said third lens group and said fifthlens group; said sixth lens group is disposed in an optical path betweensaid fifth lens group and the image plane at which the substrate isdisposed.
 153. A method according to claim 152, wherein said negativeadditional lens and said positive additional lens are placed between twopositive first lenses of said at least five positive first lenses. 154.A method according to claim 153, wherein said negative additional lensin said fifth lens group has a concave surface, and said positiveadditional lens in said fifth lens group has a convex surface facing theconcave surface of said negative additional lens.
 155. A methodaccording to claim 153, wherein said negative additional lens in saidfifth lens group includes a negative meniscus lens.
 156. A methodaccording to claim 152, wherein said projection optical system furthercomprises an aperture stop disposed between said negative additionallens of said fifth lens group and at least one of the three negativelenses of the fourth lens group.
 157. A method according to claim 153,wherein said projection optical system further comprises an aperturestop disposed between said negative additional lens of said fifth lensgroup and at least one of the three negative lenses of the fourth lensgroup.
 158. A method according to claim 154, wherein said projectionoptical system further comprises an aperture stop disposed between saidnegative additional lens of said fifth lens group and at least one ofthe three negative lenses of the fourth lens group.
 159. A methodaccording to claim 155, wherein said projection optical system furthercomprises an aperture stop disposed between said negative additionallens of said fifth lens group and at least one of the three negativelenses of the fourth lens group.
 160. A projection optical systemdisposed in an optical path between a first surface on which a reticleis arranged and a second surface on which a substrate is arranged, forprojecting a pattern of the reticle onto the substrate, comprising: afirst positive lens group having a positive power and disposed in theoptical path between said first and second surfaces, said first positivelens group comprising a positive lens having a convex surface and anegative lens having a concave surface disposed near said positive lensand facing said convex surface, and two adjacent positive lensesdisposed in an optical path between the positive lens and the secondsurface and disposed in an optical path between the negative lens andthe second surface; a first negative lens group having a negative powerand disposed on an optical path between said first surface and saidfirst positive lens group, said first negative lens group comprising atleast three negative lenses; a second positive lens group having apositive power and disposed in an optical path between said firstsurface and said first negative lens group, said second positive lensgroup comprising at least three positive lenses; a second negative lensgroup having a negative power and disposed in an optical path betweensaid first surface and said second positive lens group, said secondnegative lens group comprising at least one lens having a concavesurface facing said first surface; and a rear lens group disposed in anoptical path between the first positive lens group and the secondsurface and having a positive power, the rear lens group comprising atleast one positive lens; none of the lenses constructing said projectionoptical system being a compound lens, and a numerical aperture of saidprojection optical system at the second surface on which the substrateis arranged comprising at least 0.55.
 161. The projection optical systemaccording to claim 160, further comprising an aperture stop disposed inan optical path at a position upstream with respect to said positivelens having said convex surface and said negative lens having saidconcave surface disposed near said positive lens having said convexsurface.
 162. The projection optical system according to claim 160,wherein said projection optical system comprises a lens made offluorite.
 163. The projection optical system according to claim 160,wherein said first positive lens group comprises a plurality of lenseshaving concave surfaces opposite to the second surface respectively.164. The projection optical system according to claim 163, wherein saidprojection optical system is telecentric in both a side of the firstsurface and a side of the second surface.
 165. The projection opticalsystem according to claim 160, wherein the first positive lens groupcomprises a negative lens arranged nearest to the second surface. 166.The projection optical system according to claim 165, further comprisinga front lens group disposed in an optical path between said secondnegative lens group and the first surface, said front lens groupcomprising at least two lenses.
 167. The projection optical systemaccording to claim 160, wherein said projection optical system comprisesa lens made of fluorite and said projection optical system istelecentric in both a side of the first surface and a side of the secondsurface.
 168. The projection optical system according to claim 161,wherein said projection optical system comprises a lens made of fluoriteand said projection optical system is telecentric in both a side of thefirst surface and a side of the second surface.
 169. An exposureapparatus for exposing a pattern of a reticle onto a substrate,comprising: an illumination optical system which illuminates thereticle; and a projection optical system disposed in an optical pathbetween a first surface on which the reticle is arranged and a secondsurface on which the substrate is arranged, for projecting the patternof the reticle onto the substrate, said projection optical systemcomprising: a first positive lens group having a positive power anddisposed in the optical path between said first and second surfaces,said first positive lens group comprising a positive lens having aconvex surface, a negative lens having a concave surface disposed nearsaid positive lens and facing said convex surface, and two adjacentpositive lenses disposed in an optical path between the positive lensand the second surface and disposed in an optical path between thenegative lens and the second surface; a first negative lens group havinga negative power and disposed on an optical path between said firstsurface and said first positive lens group, said first negative lensgroup comprising at least three negative lenses; a second positive lensgroup having a positive power and disposed in an optical path betweensaid first surface and said first negative lens group, said secondpositive lens group comprising at least three positive lenses; a secondnegative lens group having a negative power and disposed in an opticalpath between said second positive lens group and said first surface,said second negative lens group comprising at least one lens having aconcave surface facing said first surface; and a rear lens groupdisposed in an optical path between the first positive lens group andthe second surface and having a positive power, the rear lens groupcomprising at least one positive lens; none of the lenses constructingsaid projection optical system being a compound lens, and a numericalaperture of said projection optical system at the second surface onwhich the substrate is arranged comprising at least 0.55.
 170. Theexposure apparatus according to claim 169, wherein said projectionoptical system comprises a lens made of fluorite.
 171. The exposureapparatus according to claim 170, further comprising an aperture stopdisposed in an optical path at a position upstream with respect to saidpositive lens having said convex surface and said negative lens havingsaid concave surface disposed near said positive lens having said convexsurface.
 172. The exposure apparatus according to claim 169, wherein thetwo adjacent positive lenses in the first positive lens group haveconcave surfaces opposite to the second surface respectively.
 173. Theexposure apparatus according to claim 172, wherein said projectionoptical system is telecentric in both a side of the first surface and aside of the second surface.
 174. The exposure apparatus according toclaim 170, wherein said illumination optical system comprises an excimerlaser supplying a light having a wavelength of 193 nm.
 175. The exposureapparatus according to claim 169, wherein the first positive lens groupand said comprises a negative lens arranged nearest to the secondsurface.
 176. The exposure apparatus according to claim 169, furthercomprising a front lens group disposed in an optical path between saidsecond negative lens group and the first surface, said front lens groupcomprising at least two lenses.
 177. The exposure apparatus according toclaim 169, wherein said projection optical system is telecentric in botha side of the first surface and a side of the second surface.
 178. Theexposure apparatus according to claim 170, wherein said projectionoptical system is telecentric in both a side of the first surface and aside of the second surface.
 179. The exposure apparatus according toclaim 176, wherein said projection optical system is telecentric in botha side of the first surface and a side of the second surface.
 180. Amethod of manufacturing a semiconductor device or a liquid crystaldevice by using the exposure apparatus according to claim 169, saidmethod comprising the steps of: disposing a reticle on said firstsurface; disposing a substrate on said second surface; illuminating saidreticle with light having a predetermined wavelength by using saidillumination optical system of said exposure apparatus; and projectingan image of a pattern formed on said reticle onto said substrate byusing said projection optical system of said exposure apparatus.
 181. Amethod of manufacturing a semiconductor device or a liquid crystaldevice by using the exposure apparatus according to claim 170, saidmethod comprising the steps of: disposing a reticle on said firstsurface; disposing a substrate on said second surface; illuminating saidreticle with light having a predetermined wavelength by using saidillumination optical system of said exposure apparatus; and projectingan image of a pattern formed on said reticle onto said substrate byusing said projection optical system of said exposure apparatus.
 182. Amethod of manufacturing a semiconductor device or a liquid crystaldevice by using the exposure apparatus according to claim 171, saidmethod comprising the steps of: disposing a reticle on said firstsurface; disposing a substrate on said second surface; illuminating saidreticle with light having a predetermined wavelength by using saidillumination optical system of said exposure apparatus; and projectingan image of a pattern formed on said reticle onto said substrate byusing said projection optical system of said exposure apparatus.
 183. Amethod of manufacturing a semiconductor device or a liquid crystaldevice by using the exposure apparatus according to claim 172, saidmethod comprising the steps of: disposing a reticle on said firstsurface; disposing a substrate on said second surface; illuminating saidreticle with light having a predetermined wavelength by using saidillumination optical system of said exposure apparatus; and projectingan image of a pattern formed on said reticle onto said substrate byusing said projection optical system of said exposure apparatus.
 184. Amethod of manufacturing a semiconductor device or a liquid crystaldevice by using the exposure apparatus according to claim 173, saidmethod comprising the steps of: disposing a reticle on said firstsurface; disposing a substrate on said second surface; illuminating saidreticle with light having a predetermined wavelength by using saidillumination optical system of said exposure apparatus; and projectingan image of a pattern formed on said reticle onto said substrate byusing said projection optical system of said exposure apparatus.
 185. Amethod of manufacturing a semiconductor device or a liquid crystaldevice by using the exposure apparatus according to claim 174, saidmethod comprising the steps of: disposing a reticle on said firstsurface; disposing a substrate on said second surface; illuminating saidreticle with light having a predetermined wavelength by using saidillumination optical system of said exposure apparatus; and projectingan image of a pattern formed on said reticle onto said substrate byusing said projection optical system of said exposure apparatus.
 186. Amethod of manufacturing a semiconductor device or a liquid crystaldevice by using the exposure apparatus according to claim 175, saidmethod comprising the steps of: disposing a reticle on said firstsurface; disposing a substrate on said second surface; illuminating saidreticle with light having a predetermined wavelength by using saidillumination optical system of said exposure apparatus; and projectingan image of a pattern formed on said reticle onto said substrate byusing said projection optical system of said exposure apparatus.
 187. Amethod of manufacturing a semiconductor device or a liquid crystaldevice by using the exposure apparatus according to claim 176, saidmethod comprising the steps of: disposing a reticle on said firstsurface; disposing a substrate on said second surface; illuminating saidreticle with light having a predetermined wavelength by using saidillumination optical system of said exposure apparatus; and projectingan image of a pattern formed on said reticle onto said substrate byusing said projection optical system of said exposure apparatus.
 188. Amethod of manufacturing a semiconductor device or a liquid crystaldevice by using the exposure apparatus according to claim 177, saidmethod comprising the steps of: disposing a reticle on said firstsurface; disposing a substrate on said second surface; illuminating saidreticle with light having a predetermined wavelength by using saidillumination optical system of said exposure apparatus; and projectingan image of a pattern formed on said reticle onto said substrate byusing said projection optical system of said exposure apparatus.
 189. Amethod of manufacturing a semiconductor device or a liquid crystaldevice by using the exposure apparatus according to claim 178, saidmethod comprising the steps of: disposing a reticle on said firstsurface; disposing a substrate on said second surface; illuminating saidreticle with light having a predetermined wavelength by using saidillumination optical system of said exposure apparatus; and projectingan image of a pattern formed on said reticle onto said substrate byusing said projection optical system of said exposure apparatus.
 190. Amethod of manufacturing a semiconductor device or a liquid crystaldevice by using the exposure apparatus according to claim 179, saidmethod comprising the steps of: disposing a reticle on said firstsurface; disposing a substrate on said second surface; illuminating saidreticle with light having a predetermined wavelength by using saidillumination optical system of said exposure apparatus; and projectingan image of a pattern formed on said reticle onto said substrate byusing said projection optical system of said exposure apparatus.